JANS2N2484

Manufacturer :

Microchip Technology

Product Category :

Transistors - Bipolar (BJT) - Single

Current - Collector (Ic) (Max) :

50 mA

Power - Max :

360 mW

Supplier Device Package :

UB

Package Shape :

RECTANGULAR

Terminal Form :

NO LEAD

Number of Terminals :

3

Collector-Emitter Voltage-Max :

60 V

HTS Code :

8541.21.00.95

Transistor Type :

NPN

DC Current Gain-Min (hFE) :

225

Number of Elements :

1

Transistor Element Material :

SILICON

RoHS :

N

Packaging :

Waffle

Series :

Military, MIL-PRF-19500/376

Package :

Bulk

Brand :

Microchip / Microsemi

Terminal Finish :

Tin/Lead (Sn/Pb)

Vce Saturation (Max) @ Ib, Ic :

300mV @ 100µA, 1mA

Product Status :

Active

Current - Collector Cutoff (Max) :

2nA

JESD-30 Code :

R-CDSO-N3

Technology :

Si

Product Type :

BJTs - Bipolar Transistors

Configuration :

Single

DC Current Gain (hFE) (Min) @ Ic, Vce :

250 @ 1mA, 5V

Package / Case :

4-SMD, No Lead

Reference Standard :

MIL-19500/376

Pin Count :

3

Operating Temperature :

-65°C ~ 200°C (TJ)

Surface Mount :

yes

Polarity/Channel Type :

NPN

Collector Current-Max (IC) :

0.05 A

Product Category :

Bipolar Transistors - BJT

Frequency - Transition :

-

Base Product Number :

2N2484

ECCN Code :

EAR99

Power Dissipation-Max (Abs) :

0.36 W

Reach Compliance Code :

Compliant

JESD-609 Code :

e0

Qualification Status :

Qualified

Voltage - Collector Emitter Breakdown (Max) :

60 V

Terminal Position :

Dual

Mounting Type :

Surface Mount