J109,126

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - JFETs

Power Dissipation-Max (Abs) :

0.4W

Base Part Number :

J109

JESD-609 Code :

e3

Number of Elements :

1

HTS Code :

8541.21.00.95

Resistance - RDS(On) :

12Ohm

Reach Compliance Code :

Unknown

Input Capacitance (Ciss) (Max) @ Vds :

30pF @ 10V VGS

Terminal Position :

BOTTOM

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

JUNCTION

RoHS Status :

ROHS3 Compliant

Qualification Status :

Not Qualified

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

Feedback Cap-Max (Crss) :

15 pF

Operating Temperature :

150°C TJ

Power - Max :

400mW

Source Url Status Check Date :

2013-06-14 00:00:00

Terminal Finish :

Matte Tin (Sn)

Voltage - Cutoff (VGS off) @ Id :

2V @ 1μA

Published :

1996

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N-Channel

Operating Mode :

Depletion Mode

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

25V

Configuration :

Single

Drain-source On Resistance-Max :

12Ohm

ECCN Code :

EAR99

Current - Drain (Idss) @ Vds (Vgs=0) :

80mA @ 15V

Pin Count :

3

Mounting Type :

Through Hole

Surface Mount :

No

Transistor Element Material :

SILICON

Number of Terminations :

3

Voltage - Breakdown (V(BR)GSS) :

25V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tape and Box (TB)

JESD-30 Code :

O-PBCY-T3