IXTZ550N055T2

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Mfr.Part #
IXTZ550N055T2
Manufacturer
Littelfuse
Package / Case
DE475
Datasheet
Download
Description
MOSFET N-CH 55V 550A DE475
Stock
56
In Stock :
56

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
550A Tc
Case Connection :
Isolated
Transistor Application :
SWITCHING
RoHS Status :
ROHS3 Compliant
Surface Mount :
yes
Product Type :
MOSFET
Configuration :
SINGLE WITH BUILT-IN DIODE
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Continuous Drain Current (ID) :
550A
Rise Time :
40 ns
Additional Feature :
AVALANCHE RATED
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Power Dissipation-Max (Abs) :
600 W
RoHS :
Details
Brand :
IXYS
Operating Mode :
ENHANCEMENT MODE
Packaging :
Tube
Drain Current-Max (Abs) (ID) :
550 A
Vgs (Max) :
±20V
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
ECCN Code :
EAR99
Maximum Operating Temperature :
+ 175 C
Lead Free :
Lead Free
Transistor Element Material :
SILICON
Supplier Device Package :
DE475
Resistance :
1MOhm
Package / Case :
DE475
DS Breakdown Voltage-Min :
55V
Width :
23.11 mm
Rds On (Max) @ Id, Vgs :
1m Ω @ 100A, 10V
Product Category :
MOSFET
Pbfree Code :
yes
Published :
2010
Pulsed Drain Current-Max (IDM) :
1650A
Factory Lead Time :
18 Weeks
Reach Compliance Code :
Compliant
Length :
21.08 mm
Type :
TrenchT2 GigaMOS Power MOSFET
Drive Voltage (Max Rds On,Min Rds On) :
10V
Package :
Tube
Drain to Source Voltage (Vdss) :
55V
Transistor Polarity :
N-Channel
Vgs(th) (Max) @ Id :
4V @ 250µA
Operating Temperature :
-55°C~175°C TJ
Number of Channels :
1 Channel
Number of Elements :
1
Mounting Style :
SMD/SMT
Number of Terminals :
6
Package Shape :
RECTANGULAR
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Product Status :
Active
Base Product Number :
IXTZ550
Channel Mode :
Enhancement
Avalanche Energy Rating (Eas) :
3000 mJ
Drain-source On Resistance-Max :
0.001 Ω
Height :
3.18 mm
JESD-30 Code :
R-PDFP-F6
Terminal Position :
Dual
Qualification Status :
Not Qualified
Power Dissipation (Max) :
600W (Tc)
Series :
FRFET®, SupreMOS®
Mounting Type :
Surface Mount
Input Capacitance (Ciss) (Max) @ Vds :
40000pF @ 25V
Number of Terminations :
6
Manufacturer :
IXYS
Pin Count :
6
Gate Charge (Qg) (Max) @ Vgs :
595nC @ 10V
Polarity/Channel Type :
N-Channel
Number of Pins :
475
Power Dissipation-Max :
600W Tc
Minimum Operating Temperature :
- 55 C
Mount :
Surface Mount
Tradename :
HiPerFET
Terminal Form :
Flat
FET Feature :
--
Datasheets
IXTZ550N055T2
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTZ550N055T2 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:DE475, Type:TrenchT2 GigaMOS Power MOSFET, Operating Temperature:-55°C~175°C TJ, Number of Channels:1 Channel, Mounting Type:Surface Mount, Number of Terminations:6, Number of Pins:475, IXTZ550N055T2 pinout, IXTZ550N055T2 datasheet PDF, IXTZ550N055T2 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTZ550N055T2 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Littelfuse IXTZ550N055T2


N-Channel Tube 1m Ω @ 100A, 10V ±20V 40000pF @ 25V 595nC @ 10V 55V DE475

IXTZ550N055T2 Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 3000 mJ.A device's maximum input capacitance is 40000pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 550A for this device. Drain current refers to the capacity of the device to conduct continuous current.Its drain current is 550 A, and it is the maximum continuous current the device can conduct.Its maximum pulsed drain current is 1650A, which is also its maximum rating peak drainage current.For normal operation, maintain the DS breakdown voltage above 55V.To operate this transistor, you need to apply a 55V drain to source voltage (Vdss).This device uses no drive voltage (10V) to reduce its overall power consumption.

IXTZ550N055T2 Features


the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 550A
based on its rated peak drain current 1650A.
a 55V drain to source voltage (Vdss)


IXTZ550N055T2 Applications


There are a lot of IXYS
IXTZ550N055T2 applications of single MOSFETs transistors.


  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
  • DC-to-DC converters
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