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IXTE250N10

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Mfr.Part #: IXTE250N10

Manufacturer: Littelfuse

Package / Case: SOT-227-4, miniBLOC

Datasheet: Download

Description: MOSFET N-CH 100V 250A SOT227B

Stock: 35,630

In Stock ：: 35,630

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Manufacturer :: Littelfuse
Product Category :: Transistors - FETs, MOSFETs - Single

Package / Case :: SOT-227-4, miniBLOC

Manufacturer :: IXYS

Mount :: Chassis Mount

Product Category :: MOSFET

Supplier Device Package :: SOT-227B

Element Configuration :: Single

Package :: Tube

Base Product Number :: IXTE250

Packaging :: Tube

Subcategory :: MOSFETs

Series :: --

Mounting Type :: Chassis Mount

Vgs(th) (Max) @ Id :: --

Brand :: IXYS

Number of Channels :: 1 Channel

Drain to Source Resistance :: 5mOhm

Drain to Source Voltage (Vdss) :: 100V

Product Type :: MOSFET

Configuration :: Single

Transistor Type :: 1 N-Channel

Power Dissipation (Max) :: 730W

Operating Temperature :: --

Continuous Drain Current (ID) :: 250A

Current - Continuous Drain (Id) @ 25°C :: 250A

Width :: 5.21 mm

RoHS :: Details

Rds On (Max) @ Id, Vgs :: --

FET Feature :: --

Height :: 21.34 mm

RoHS Status :: ROHS3 Compliant

Power Dissipation :: 730W

Moisture Sensitivity Level (MSL) :: 1 (Unlimited)

Length :: 16.13 mm

Mounting Style :: Through Hole

Product Status :: Active

Drain to Source Breakdown Voltage :: 100V

FET Type :: N-Channel

Transistor Polarity :: N-Channel

Number of Pins :: 3

Datasheets: IXTE250N10

Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXTE250N10 from Chip IC,where excellence meets affordability. This product stands out with its Package / Case：SOT-227-4, miniBLOC, Mounting Type：Chassis Mount, Number of Channels：1 Channel, Operating Temperature：--, Number of Pins：3, IXTE250N10 pinout, IXTE250N10 datasheet PDF, IXTE250N10 amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXTE250N10 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

N-Channel Tube -- 100V SOT-227-4, miniBLOC

IXTE250N10 Overview

The drain current is the maximum continuous current the device can conduct, and this device has 250A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 100V, and this device has a drainage-to-source breakdown voltage of 100VV.This device has a drain-to-source resistance of 5mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.For this transistor to work, a voltage 100V is required between drain and source (Vdss).

IXTE250N10 Features

a continuous drain current (ID) of 250A
a drain-to-source breakdown voltage of 100V voltage
single MOSFETs transistor is 5mOhm
a 100V drain to source voltage (Vdss)

IXTE250N10 Applications

There are a lot of IXYS
IXTE250N10 applications of single MOSFETs transistors.

AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies

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