IXFI7N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2006

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HiPerFET™, PolarHT™

Rise Time :

32ns

Power Dissipation (Max) :

200W (Tc)

JEDEC-95 Code :

TO-263

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Form :

THROUGH-HOLE

Number of Elements :

1

Base Product Number :

IXFI7

Rds On Max :

1.44 Ω

Drain-source On Resistance-Max :

1.44 Ω

JESD-609 Code :

e3

Package :

Tube

Drain Current-Max (Abs) (ID) :

7A

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Packaging :

Tube

Qualification Status :

Not Qualified

Supplier Device Package :

TO-262 (I2PAK)

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

200 W

Rds On (Max) @ Id, Vgs :

1.44 Ω @ 3.5A, 10V

Current - Continuous Drain (Id) @ 25°C :

7A Tc

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

RoHS Compliant

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

800V

Drain to Source Breakdown Voltage :

800V

Transistor Application :

SWITCHING

Power Dissipation-Max :

200W Tc

Configuration :

SINGLE WITH BUILT-IN DIODE

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 25V

FET Feature :

--

Number of Terminals :

3

DS Breakdown Voltage-Min :

800 V

JESD-30 Code :

R-PSIP-T3

Product Status :

Obsolete

Min Operating Temperature :

-55 °C

Pulsed Drain Current-Max (IDM) :

18A

Input Capacitance :

1.89 nF

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Terminal Position :

Single

RoHS :

Compliant

Vgs (Max) :

±30V

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

300 mJ

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Manufacturer :

IXYS Corporation

Package Shape :

RECTANGULAR

FET Type :

N-Channel

Fall Time (Typ) :

24 ns

Number of Terminations :

3

Continuous Drain Current (ID) :

7A

Surface Mount :

No

Pin Count :

4

Additional Feature :

AVALANCHE RATED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Resistance :

1.4 Ω

Polarity/Channel Type :

N-Channel

Max Operating Temperature :

150 °C

Turn-Off Delay Time :

55 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

30V

Reach Compliance Code :

Compliant

Mount :

Through Hole

Pbfree Code :

yes

Power Dissipation :

200W

Vgs(th) (Max) @ Id :

5V @ 1mA