IXFI7N80P

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

4

Drain to Source Voltage (Vdss) :

800V

Drain-source On Resistance-Max :

1.44 Ω

Terminal Finish :

Matte Tin (Sn)

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

32nC @ 10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supplier Device Package :

TO-262 (I2PAK)

JESD-30 Code :

R-PSIP-T3

Current - Continuous Drain (Id) @ 25°C :

7A Tc

FET Feature :

--

Surface Mount :

No

Max Power Dissipation :

200 W

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1890pF @ 25V

Mounting Type :

Through Hole

Published :

2006

Drain to Source Resistance :

1.4 Ω

Turn-Off Delay Time :

55 ns

JESD-609 Code :

e3

Mount :

Through Hole

Input Capacitance :

1.89 nF

Base Product Number :

IXFI7

Power Dissipation (Max) :

200W (Tc)

Drain Current-Max (Abs) (ID) :

7A

Vgs (Max) :

±30V

Fall Time (Typ) :

24 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Manufacturer :

IXYS Corporation

Drive Voltage (Max Rds On,Min Rds On) :

10V

Rise Time :

32ns

Vgs(th) (Max) @ Id :

5V @ 1mA

Max Operating Temperature :

150 °C

Package Shape :

RECTANGULAR

Pbfree Code :

yes

Power Dissipation :

200W

Reach Compliance Code :

Compliant

Polarity/Channel Type :

N-Channel

Min Operating Temperature :

-55 °C

Avalanche Energy Rating (Eas) :

300 mJ

Qualification Status :

Not Qualified

Product Status :

Obsolete

RoHS :

Compliant

Pulsed Drain Current-Max (IDM) :

18A

Additional Feature :

AVALANCHE RATED

JEDEC-95 Code :

TO-263

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

800V

FET Type :

N-Channel

Power Dissipation-Max :

200W Tc

Element Configuration :

Single

Number of Terminations :

3

Number of Terminals :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Position :

Single

Number of Elements :

1

Packaging :

Tube

DS Breakdown Voltage-Min :

800 V

Transistor Element Material :

SILICON

Rds On Max :

1.44 Ω

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Terminal Form :

THROUGH-HOLE

Series :

HiPerFET™, PolarHT™

Gate to Source Voltage (Vgs) :

30V

Configuration :

SINGLE WITH BUILT-IN DIODE

Continuous Drain Current (ID) :

7A

Rds On (Max) @ Id, Vgs :

1.44 Ω @ 3.5A, 10V

RoHS Status :

RoHS Compliant