IXFI7N80P

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Mfr.Part #
IXFI7N80P
Manufacturer
Littelfuse
Package / Case
TO-262-3 Long Leads, I2Pak, TO-262AA
Datasheet
Download
Description
MOSFET N-CH 800V 7A TO262
Stock
17,813
In Stock :
17,813

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Manufacturer :
Littelfuse
Product Category :
Transistors - FETs, MOSFETs - Single
JESD-30 Code :
R-PSIP-T3
Drain to Source Resistance :
1.4 Ω
Drain to Source Voltage (Vdss) :
800V
JESD-609 Code :
e3
Input Capacitance (Ciss) (Max) @ Vds :
1890pF @ 25V
Rds On Max :
1.44 Ω
Terminal Position :
Single
FET Type :
N-Channel
Power Dissipation :
200W
Package :
Tube
Pulsed Drain Current-Max (IDM) :
18A
FET Feature :
--
Drain-source On Resistance-Max :
1.44 Ω
Rise Time :
32ns
Max Power Dissipation :
200 W
DS Breakdown Voltage-Min :
800 V
Transistor Application :
SWITCHING
Rds On (Max) @ Id, Vgs :
1.44 Ω @ 3.5A, 10V
Turn-Off Delay Time :
55 ns
Vgs(th) (Max) @ Id :
5V @ 1mA
Terminal Finish :
Matte Tin (Sn)
Base Product Number :
IXFI7
Configuration :
SINGLE WITH BUILT-IN DIODE
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
10V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-55 °C
Gate to Source Voltage (Vgs) :
30V
Surface Mount :
No
JEDEC-95 Code :
TO-263
Operating Mode :
ENHANCEMENT MODE
Reach Compliance Code :
Compliant
Time@Peak Reflow Temperature-Max (s) :
NOT SPECIFIED
Supplier Device Package :
TO-262 (I2PAK)
Packaging :
Tube
Terminal Form :
THROUGH-HOLE
Series :
HiPerFET™, PolarHT™
Polarity/Channel Type :
N-Channel
RoHS :
Compliant
Drain Current-Max (Abs) (ID) :
7A
Mount :
Through Hole
Input Capacitance :
1.89 nF
Power Dissipation (Max) :
200W (Tc)
Power Dissipation-Max :
200W Tc
Current - Continuous Drain (Id) @ 25°C :
7A Tc
Transistor Element Material :
SILICON
Vgs (Max) :
±30V
Avalanche Energy Rating (Eas) :
300 mJ
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Continuous Drain Current (ID) :
7A
Package Shape :
RECTANGULAR
Gate Charge (Qg) (Max) @ Vgs :
32nC @ 10V
Number of Terminals :
3
Fall Time (Typ) :
24 ns
Element Configuration :
Single
Pin Count :
4
Operating Temperature :
-55°C~150°C TJ
Mounting Type :
Through Hole
Pbfree Code :
yes
Published :
2006
Drain to Source Breakdown Voltage :
800V
Qualification Status :
Not Qualified
Number of Terminations :
3
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package / Case :
TO-262-3 Long Leads, I2Pak, TO-262AA
Product Status :
Obsolete
Additional Feature :
AVALANCHE RATED
Manufacturer :
IXYS Corporation
Max Operating Temperature :
150 °C
Number of Elements :
1
Datasheets
IXFI7N80P
Introducing Transistors - FETs, MOSFETs - Single Littelfuse IXFI7N80P from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-262-3 Long Leads, I2Pak, TO-262AA, IXFI7N80P pinout, IXFI7N80P datasheet PDF, IXFI7N80P amp .Beyond Transistors - FETs, MOSFETs - Single Littelfuse IXFI7N80P ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.



N-Channel Tube 1.44 Ω @ 3.5A, 10V ±30V 1890pF @ 25V 32nC @ 10V 800V TO-262-3 Long Leads, I2Pak, TO-262AA

IXFI7N80P Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 300 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1890pF @ 25V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 7A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 800V, and this device has a drainage-to-source breakdown voltage of 800VV.Drain current refers to the maximum continuous current a device can conduct, and it is 7A.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 55 ns.Peak drain current is 18A, which is the maximum pulsed drain current.This device has a drain-to-source resistance of 1.4 Ω when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 30V to 1.Normal operation requires that the DS breakdown voltage remain above 800 V.For this transistor to work, a voltage 800V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

IXFI7N80P Features


the avalanche energy rating (Eas) is 300 mJ
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 55 ns
based on its rated peak drain current 18A.
single MOSFETs transistor is 1.4 Ω
a 800V drain to source voltage (Vdss)


IXFI7N80P Applications


There are a lot of IXYS
IXFI7N80P applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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