IXFG55N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Element Configuration :

Single

Transistor Application :

SWITCHING

Brand :

IXYS

Factory Lead Time :

30 Weeks

Transistor Type :

1 N-Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

ISO264™

Length :

20.29 mm

Turn-Off Delay Time :

120 ns

Base Product Number :

IXFG55

Rise Time :

60ns

Series :

HiPerFET™

Mounting Type :

Through Hole

Manufacturer :

IXYS

Surface Mount :

No

DS Breakdown Voltage-Min :

500 V

Power Dissipation (Max) :

400W (Tc)

Continuous Drain Current (ID) :

48A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Fall Time (Typ) :

45 ns

Configuration :

Single

Transistor Polarity :

N-Channel

Polarity/Channel Type :

N-Channel

Mount :

Through Hole

Reach Compliance Code :

Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain to Source Voltage (Vdss) :

500V

Product Category :

MOSFET

Drain to Source Breakdown Voltage :

500V

Number of Terminals :

3

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.09Ohm

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Terminal Form :

THROUGH-HOLE

Operating Temperature :

-40°C~150°C TJ

Rds On (Max) @ Id, Vgs :

90m Ω @ 27.5A, 10V

FET Feature :

--

Maximum Operating Temperature :

+ 150 C

Number of Terminations :

3

Terminal Position :

Single

Subcategory :

MOSFETs

Pbfree Code :

yes

Drive Voltage (Max Rds On,Min Rds On) :

10V

Tradename :

HyperFET

Transistor Element Material :

SILICON

Number of Elements :

1

Product Status :

Obsolete

Mounting Style :

Through Hole

Package :

Tube

Pulsed Drain Current-Max (IDM) :

220A

Supplier Device Package :

ISO264™

Power Dissipation-Max :

400W Tc

Height :

26.42 mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Avalanche Energy Rating (Eas) :

3000 mJ

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Gate to Source Voltage (Vgs) :

20V

Width :

5.21 mm

Channel Mode :

Enhancement

RoHS :

Details

Product Type :

MOSFET

Vgs (Max) :

±20V

Operating Mode :

ENHANCEMENT MODE

Published :

2003

Number of Channels :

1 Channel

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

JESD-30 Code :

R-PSIP-T3

Power Dissipation :

400W

Pin Count :

3

RoHS Status :

RoHS Compliant

Number of Pins :

3

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Package Shape :

RECTANGULAR

Qualification Status :

Not Qualified

Minimum Operating Temperature :

- 40 C