IXFG55N50
- Mfr.Part #
- IXFG55N50
- Manufacturer
- Littelfuse
- Package / Case
- ISO264™
- Datasheet
- Download
- Description
- MOSFET N-CH 500V 48A ISO264
- Stock
- 18,314
- In Stock :
- 18,314
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- Manufacturer :
- Littelfuse
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation (Max) :
- 400W (Tc)
- Input Capacitance (Ciss) (Max) @ Vds :
- 9400pF @ 25V
- Number of Pins :
- 3
- Vgs (Max) :
- ±20V
- Brand :
- IXYS
- Mount :
- Through Hole
- Drain-source On Resistance-Max :
- 0.09Ohm
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Subcategory :
- MOSFETs
- Power Dissipation-Max :
- 400W Tc
- Number of Terminals :
- 3
- Operating Temperature :
- -40°C~150°C TJ
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- DS Breakdown Voltage-Min :
- 500 V
- Drain to Source Breakdown Voltage :
- 500V
- Rds On (Max) @ Id, Vgs :
- 90m Ω @ 27.5A, 10V
- Package / Case :
- ISO264™
- Supplier Device Package :
- ISO264™
- RoHS :
- Details
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Drain to Source Voltage (Vdss) :
- 500V
- Polarity/Channel Type :
- N-Channel
- Pbfree Code :
- yes
- Published :
- 2003
- Height :
- 26.42 mm
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Manufacturer :
- IXYS
- Minimum Operating Temperature :
- - 40 C
- Continuous Drain Current (ID) :
- 48A
- Package Shape :
- RECTANGULAR
- Transistor Type :
- 1 N-Channel
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Base Product Number :
- IXFG55
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 400W
- Gate to Source Voltage (Vgs) :
- 20V
- Current - Continuous Drain (Id) @ 25°C :
- 48A Tc
- Tradename :
- HyperFET
- Transistor Application :
- SWITCHING
- FET Feature :
- --
- Vgs(th) (Max) @ Id :
- 4.5V @ 8mA
- FET Type :
- N-Channel
- Number of Channels :
- 1 Channel
- Pulsed Drain Current-Max (IDM) :
- 220A
- Operating Mode :
- ENHANCEMENT MODE
- Pin Count :
- 3
- Fall Time (Typ) :
- 45 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 330nC @ 10V
- Series :
- HiPerFET™
- Transistor Polarity :
- N-Channel
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Case Connection :
- DRAIN
- Surface Mount :
- No
- Width :
- 5.21 mm
- Length :
- 20.29 mm
- Transistor Element Material :
- SILICON
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Element Configuration :
- Single
- Terminal Form :
- THROUGH-HOLE
- Reach Compliance Code :
- Compliant
- Channel Mode :
- Enhancement
- RoHS Status :
- RoHS Compliant
- JESD-30 Code :
- R-PSIP-T3
- Maximum Operating Temperature :
- + 150 C
- Package :
- Tube
- Product Type :
- MOSFET
- Factory Lead Time :
- 30 Weeks
- Rise Time :
- 60ns
- Mounting Style :
- Through Hole
- Terminal Position :
- Single
- Product Status :
- Obsolete
- Turn-Off Delay Time :
- 120 ns
- Product Category :
- MOSFET
- Datasheets
- IXFG55N50
IXFG55N50 Documents
N-Channel Tube 90m Ω @ 27.5A, 10V ±20V 9400pF @ 25V 330nC @ 10V 500V ISO264™
IXFG55N50 Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 3000 mJ.A device's maximal input capacitance is 9400pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 48A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 500V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 120 ns, which is the time to charge the device's input capacitance before drain current conduction begins.In terms of pulsed drain current, it has a maximum of 220A, which is its maximum rated peak drain current.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.To maintain normal operation, it is recommended that the DS breakdown voltage be above 500 V.This transistor requires a 500V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).
IXFG55N50 Features
the avalanche energy rating (Eas) is 3000 mJ
a continuous drain current (ID) of 48A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 120 ns
based on its rated peak drain current 220A.
a 500V drain to source voltage (Vdss)
IXFG55N50 Applications
There are a lot of IXYS
IXFG55N50 applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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