IXFG55N50

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

No

Package :

Tube

Element Configuration :

Single

Subcategory :

MOSFETs

Height :

26.42 mm

Product Category :

MOSFET

Length :

20.29 mm

FET Feature :

--

Mount :

Through Hole

Drain-source On Resistance-Max :

0.09Ohm

Packaging :

Tube

Power Dissipation :

400W

Case Connection :

DRAIN

Input Capacitance (Ciss) (Max) @ Vds :

9400pF @ 25V

Brand :

IXYS

Avalanche Energy Rating (Eas) :

3000 mJ

Mounting Style :

Through Hole

Vgs(th) (Max) @ Id :

4.5V @ 8mA

Drain to Source Breakdown Voltage :

500V

Supplier Device Package :

ISO264™

Gate Charge (Qg) (Max) @ Vgs :

330nC @ 10V

Rise Time :

60ns

Configuration :

Single

Turn-Off Delay Time :

120 ns

Reach Compliance Code :

Compliant

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Power Dissipation-Max :

400W Tc

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

Transistor Element Material :

SILICON

Pulsed Drain Current-Max (IDM) :

220A

Transistor Polarity :

N-Channel

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

10V

Package / Case :

ISO264™

Package Shape :

RECTANGULAR

Number of Terminations :

3

Base Product Number :

IXFG55

Terminal Form :

THROUGH-HOLE

Rds On (Max) @ Id, Vgs :

90m Ω @ 27.5A, 10V

Tradename :

HyperFET

FET Type :

N-Channel

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

500V

Qualification Status :

Not Qualified

Number of Channels :

1 Channel

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS :

Details

Manufacturer :

IXYS

Number of Terminals :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Type :

1 N-Channel

RoHS Status :

RoHS Compliant

Series :

HiPerFET™

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

500 V

Minimum Operating Temperature :

- 40 C

Fall Time (Typ) :

45 ns

Channel Mode :

Enhancement

Terminal Position :

Single

Transistor Application :

SWITCHING

Width :

5.21 mm

Published :

2003

JESD-30 Code :

R-PSIP-T3

Polarity/Channel Type :

N-Channel

Product Type :

MOSFET

Vgs (Max) :

±20V

Maximum Operating Temperature :

+ 150 C

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

48A

Mounting Type :

Through Hole

Product Status :

Obsolete

Operating Temperature :

-40°C~150°C TJ

Pin Count :

3

Power Dissipation (Max) :

400W (Tc)

Factory Lead Time :

30 Weeks