IXDN504SIAT/R
- Mfr.Part #
- IXDN504SIAT/R
- Manufacturer
- Littelfuse
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR LOW-SIDE 8SOIC
- Stock
- 30,324
- In Stock :
- 30,324
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- Manufacturer :
- Littelfuse
- Product Category :
- Gate Drivers
- Channel Type :
- Independent
- Temperature Grade :
- Military
- Surface Mount :
- yes
- HTS Code :
- 8542.39.00.01
- Height Seated (Max) :
- 1.75mm
- Supplier Device Package :
- 8-SOIC
- Seated Height-Max :
- 1.75 mm
- Number of Terminations :
- 8
- Packaging :
- Tape and Reel (TR)
- Base Product Number :
- IXDN504
- Current - Peak Output (Source, Sink) :
- 4A 4A
- Terminal Form :
- Gull wing
- Nominal Supply Current :
- 10mA
- Terminal Position :
- Dual
- Rise Time :
- 16ns
- Mounting Type :
- Surface Mount
- Weight :
- 449.991981mg
- Series :
- --
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Radiation Hardening :
- No
- Product Status :
- Obsolete
- RoHS Status :
- RoHS Compliant
- Driven Configuration :
- Low-Side
- Output Peak Current Limit-Nom :
- 4A
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Published :
- 2007
- Length :
- 4.9mm
- JESD-30 Code :
- R-PDSO-G8
- Propagation Delay :
- 40 ns
- High Side Driver :
- No
- Pin Count :
- 8
- Package Shape :
- RECTANGULAR
- Number of Drivers :
- 2
- Fall Time (Typ) :
- 14 ns
- Gate Type :
- IGBT, N-Channel, P-Channel MOSFET
- Supply Voltage :
- 18V
- Number of Terminals :
- 8
- Manufacturer :
- IXYS Corporation
- Voltage - Supply :
- 4.5V~30V
- Number of Pins :
- 8
- Input Type :
- Non-Inverting
- Operating Temperature :
- -55°C~150°C TJ
- Power Supplies :
- 4.5/30V
- Logic Voltage - VIL, VIH :
- 0.8V 3V
- Width :
- 3.9mm
- Reach Compliance Code :
- Compliant
- Turn Off Time :
- 0.05 μs
- Package :
- Tape and Reel (TR)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Number of Functions :
- 2
- Turn On Time :
- 0.06 µs
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Base Part Number :
- IXD*504
- Qualification Status :
- Not Qualified
- Interface IC Type :
- BUFFER OR INVERTER BASED MOSFET DRIVER
- Rise / Fall Time (Typ) :
- 9ns 8ns
- Terminal Pitch :
- 1.27 mm
- Datasheets
- IXDN504SIAT/R

Gate Drivers Littelfuse IXDN504SIAT/R Overview
The Littelfuse IXDN504SIAT/R gate driver is a crucial component in modern electronic designs, specifically engineered for driving low-side applications. This high-performance integrated circuit is housed in an 8SOIC package, offering a compact footprint suitable for dense PCB layouts. The IXDN504SIAT/R is designed to efficiently manage power and enhance the reliability and speed of switching applications. Its robust output stages are capable of sourcing and sinking high peak currents, making it an ideal choice for managing MOSFETs and IGBTs in a variety of industrial and commercial applications. Using the Gate Drivers Littelfuse IXDN504SIAT/R ensures precise control and optimized performance in challenging environments.
IXDN504SIAT/R Features
- High peak output current capability, which ensures adequate drive for power MOSFETs and IGBTs.
- Dual independent channels allow for flexible designs and control.
- Fast propagation delays and rise/fall times, enhancing overall system efficiency.
- Wide operating voltage range, accommodating a variety of power supplies.
- Robust design with built-in protection features against under-voltage and over-temperature conditions.
IXDN504SIAT/R Applications
- Motors: Utilized in motor control circuits to drive the MOSFETs or IGBTs that control the motor speed and direction.
- Solar inverters: Helps in the conversion of DC output of solar panels to AC, driving the power switches in the inverter circuitry.
- Power supplies: Used to enhance the reliability and efficiency of switch-mode power supplies through improved gate driving capabilities.
- Electric vehicles: Drives the power semiconductor devices in the main propulsion inverter, contributing to the efficiency and reliability of electric vehicle powertrains.
- LED lighting: Employs in the control circuits for LED lighting, ensuring precise control of light output and maximizing energy efficiency.
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