IXDI430MYI
- Mfr.Part #
- IXDI430MYI
- Manufacturer
- Littelfuse
- Package / Case
- Datasheet
- Download
- Description
- IC GATE DRVR LOW-SIDE TO263
- Stock
- 33,044
- In Stock :
- 33,044
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- Manufacturer :
- Littelfuse
- Product Category :
- Gate Drivers
- Weight :
- 1.59999g
- Temperature Grade :
- Military
- Product Status :
- Obsolete
- ECCN Code :
- EAR99
- Package Shape :
- RECTANGULAR
- Driven Configuration :
- Low-Side
- Interface IC Type :
- BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER
- Seated Height-Max :
- 4.8 mm
- Max Power Dissipation :
- 2W
- Base Part Number :
- IXD*430
- Terminal Form :
- Gull wing
- Length :
- 9.975mm
- Series :
- --
- Channel Type :
- Single
- Packaging :
- Bulk
- Input Type :
- Inverting
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Nominal Supply Current :
- 3mA
- Turn Off Time :
- 0.039 µs
- Number of Terminals :
- 5
- Number of Drivers :
- 1
- Output Peak Current Limit-Nom :
- 30A
- RoHS Status :
- RoHS Compliant
- Reach Compliance Code :
- Compliant
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Base Product Number :
- IXDI430
- Supply Voltage :
- 18V
- Operating Supply Voltage :
- 35V
- Number of Terminations :
- 5
- Terminal Position :
- Single
- Number of Functions :
- 1
- Height Seated (Max) :
- 4.8mm
- Pin Count :
- 4
- Surface Mount :
- yes
- Turn On Time :
- 0.045 µs
- Voltage - Supply :
- 8.5V~35V
- Rise Time :
- 20ns
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Mount :
- Surface Mount
- High Side Driver :
- yes
- Mounting Type :
- Surface Mount
- Gate Type :
- IGBT, N-Channel, P-Channel MOSFET
- Fall Time (Typ) :
- 18 ns
- Published :
- 2005
- Current - Peak Output (Source, Sink) :
- 30A 30A
- Rise / Fall Time (Typ) :
- 18ns 16ns
- Package :
- Bulk
- Terminal Pitch :
- 1.7 mm
- Width :
- 9.15 mm
- Manufacturer :
- IXYS Corporation
- HTS Code :
- 8542.39.00.01
- Output Current :
- 30A
- Logic Voltage - VIL, VIH :
- 0.8V 3.5V
- JESD-30 Code :
- R-PSSO-G5
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- IXDI430MYI

Gate Drivers Littelfuse IXDI430MYI Overview
The Littelfuse IXDI430MYI gate driver is a crucial component for engineers and designers focusing on efficiency and reliability in their power management systems. This high-performance, low-side gate driver is engineered to deliver optimal results in a compact TO263 package, ensuring easy integration into various applications. With the capability to drive MOSFETs and IGBTs efficiently, the IXDI430MYI facilitates improved switching performance and reduced power dissipation, making it a preferred choice for demanding electronic environments. The strategic design and robustness of the Littelfuse IXDI430MYI gate driver support enhanced product longevity and operational reliability, attracting bulk purchases from B2B clients seeking high-quality, durable components.
IXDI430MYI Features
The IXDI430MYI gate driver from Littelfuse comes packed with features designed for superior performance. Key attributes include high peak output current capabilities, wide operating voltage range, and built-in protection mechanisms such as under-voltage lockout and thermal shutdown. These features ensure that the driver operates under optimal conditions, thereby enhancing the overall efficiency and safety of the application.
IXDI430MYI Applications
- Motor Control Systems: The IXDI430MYI is used to drive motors in applications requiring precise control over speed and torque. Its high current capabilities and rapid response times are essential for maintaining system efficiency and performance.
- Solar Inverters: In solar power applications, the IXDI430MYI drives the switching of MOSFETs or IGBTs in inverter circuits, which is crucial for converting DC to AC power efficiently and reliably.
- Electric Vehicle (EV) Charging: This driver is integral in EV charging systems, facilitating the management of power flow during the charging process, thus ensuring fast and safe charging of electric vehicles.
- Power Supply Units: The IXDI430MYI enhances the performance of power supplies by improving the efficiency of the switching components, which is vital for stable and reliable power delivery in various electronics.
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