IXCY01N90E

Manufacturer :

Littelfuse

Product Category :

Transistors - FETs, MOSFETs - Single

Terminal Form :

Gull wing

Case Connection :

DRAIN

Pin Count :

4

Number of Elements :

1

Turn-Off Delay Time :

61 ns

Series :

--

Polarity/Channel Type :

N-Channel

Number of Terminals :

2

Power Dissipation (Max) :

40W (Tc)

Power Dissipation-Max (Abs) :

40 W

Vgs (Max) :

±20V

Base Product Number :

IXCY01

Continuous Drain Current (ID) :

250mA

Published :

2002

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Power Dissipation-Max :

40W Tc

Packaging :

Tube

FET Feature :

--

Package Shape :

RECTANGULAR

RoHS Status :

RoHS Compliant

Number of Terminations :

2

JESD-609 Code :

e0

Manufacturer :

IXYS Corporation

Terminal Finish :

Tin/Lead (Sn/Pb)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Pulsed Drain Current-Max (IDM) :

175A

Input Capacitance (Ciss) (Max) @ Vds :

133pF @ 25V

FET Type :

N-Channel

Drain to Source Breakdown Voltage :

900V

Reach Compliance Code :

Unknown

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Transistor Element Material :

SILICON

Terminal Position :

Single

Power Dissipation :

40W

Rds On (Max) @ Id, Vgs :

80 Ω @ 50mA, 10V

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

DS Breakdown Voltage-Min :

900 V

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

JEDEC-95 Code :

TO-252AA

Operating Temperature :

-55°C~150°C TJ

Supplier Device Package :

TO-252

JESD-30 Code :

R-PSSO-G2

Mounting Type :

Surface Mount

Pbfree Code :

yes

Drain to Source Voltage (Vdss) :

900V

Surface Mount :

yes

Product Status :

Obsolete

Package :

Tube

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.08Ohm

Mount :

Surface Mount

Vgs(th) (Max) @ Id :

5V @ 25μA

Current - Continuous Drain (Id) @ 25°C :

250mA Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Pins :

3

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Single