ISZ0803NLSATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.3V @ 18μA

Drain to Source Voltage (Vdss) :

100 V

Mounting Type :

Surface Mount

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Subcategory :

MOSFETs

Maximum Operating Temperature :

+ 150 C

Product Type :

MOSFET

Vgs (Max) :

±20V

Power Dissipation (Max) :

2.1W (Ta), 43W (Tc)

Pin Count :

8

Package / Case :

8-PowerTDFN

Power Dissipation :

43W

Input Capacitance (Ciss) (Max) @ Vds :

1000 pF @ 50 V

Operating Temperature :

-55°C ~ 150°C (TJ)

Current - Continuous Drain (Id) @ 25°C :

7.7A (Ta), 37A (Tc)

Minimum Operating Temperature :

- 55 C

Number of Channels :

1 Channel

Package :

Digi-Reel?

Package Type :

PQFN 3 x 3

Rds On (Max) @ Id, Vgs :

16.9mOhm @ 20A, 10V

Channel Type :

N Channel

Continuous Drain Current Id :

37A

Brand :

Infineon Technologies

Transistor Polarity :

N-Channel

Mounting Style :

SMD/SMT

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 10 V

Manufacturer :

Infineon

FET Type :

N-Channel

Channel Mode :

Enhancement

Product Category :

MOSFET

Base Product Number :

ISZ0803N

Product Status :

Active

Packaging :

Cut Tape

Series :

OptiMOS? 5

Number of Elements per Chip :

1

Qualification :

-

Supplier Device Package :

PG-TSDSON-8-26

FET Feature :

-