ISP20EP10LMXTSA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Channel Type :

P

Power Dissipation :

4.2W

FET Type :

P-Channel

Package :

Digi-Reel?

Vgs(th) (Max) @ Id :

2V @ 78μA

Drain to Source Voltage (Vdss) :

100 V

Package / Case :

TO-261-4, TO-261AA

Supplier Device Package :

PG-SOT223-4

Input Capacitance (Ciss) (Max) @ Vds :

170 pF @ 50 V

Package Type :

SOT-223

FET Feature :

-

Continuous Drain Current Id :

990mA

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

650mA (Ta), 990mA (Tc)

Transistor Polarity :

P-Channel

Product Status :

Active

Minimum Operating Temperature :

- 55 C

Gate Charge (Qg) (Max) @ Vgs :

3.5 nC @ 10 V

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Qualification :

-

Channel Mode :

Enhancement

Number of Channels :

1 Channel

Pin Count :

3

Maximum Operating Temperature :

+ 150 C

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Series :

OptiMOS?

Rds On (Max) @ Id, Vgs :

2Ohm @ 600mA, 10V

Number of Elements per Chip :

1

MSL :

MSL 1 - Unlimited

Power Dissipation (Max) :

1.8W (Ta), 4.2W (Tc)

Base Product Number :

ISP20E

Operating Temperature :

-55°C ~ 150°C (TJ)