ISL9N307AS3ST

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Mfr.Part #
ISL9N307AS3ST
Manufacturer
Fairchild Semiconductor
Package / Case
Datasheet
Download
Description
N-CHANNEL POWER MOSFET
Stock
8,377
In Stock :
8,377

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminals :
2
JESD-30 Code :
R-PSSO-G2
Case Connection :
DRAIN
Terminal Finish :
NOT SPECIFIED
FET Technology :
METAL-OXIDE SEMICONDUCTOR
Turn-Off Delay Time :
60 ns
Drain to Source Resistance :
11.5 mΩ
Qualification Status :
COMMERCIAL
Transistor Element Material :
SILICON
Transistor Application :
SWITCHING
Operating Mode :
ENHANCEMENT MODE
Surface Mount :
yes
Number of Elements :
1
Power Dissipation :
100 W
Continuous Drain Current (ID) :
75 A
Peak Reflow Temperature (Cel) :
NOT SPECIFIED
Package Shape :
RECTANGULAR
Reach Compliance Code :
Unknown
Pbfree Code :
yes
Polarity/Channel Type :
N-Channel
Rise Time :
45 ns
Terminal Form :
Gull wing
JEDEC-95 Code :
TO-263AB
Terminal Position :
Single
Drain to Source Breakdown Voltage :
30 V
Number of Pins :
3
RoHS :
Compliant
Max Operating Temperature :
175 °C
Configuration :
SINGLE WITH BUILT-IN DIODE
Gate to Source Voltage (Vgs) :
20 V
DS Breakdown Voltage-Min :
30 V
Drain-source On Resistance-Max :
0.007 Ω
Element Configuration :
Single
Min Operating Temperature :
-55 °C
Manufacturer :
Rochester Electronics LLC
Datasheets
ISL9N307AS3ST
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor ISL9N307AS3ST from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, ISL9N307AS3ST pinout, ISL9N307AS3ST datasheet PDF, ISL9N307AS3ST amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor ISL9N307AS3ST ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor ISL9N307AS3ST




ISL9N307AS3ST Overview


This device has a continuous drain current (ID) of [75 A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=30 V, the drain-source breakdown voltage is 30 V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 60 ns.MOSFETs have 11.5 mΩ resistance between the drain and the source when biased into the on state by a gate-to-source voltage (VGS).Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20 V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30 V.

ISL9N307AS3ST Features


a continuous drain current (ID) of 75 A
a drain-to-source breakdown voltage of 30 V voltage
the turn-off delay time is 60 ns
single MOSFETs transistor is 11.5 mΩ


ISL9N307AS3ST Applications


There are a lot of ON Semiconductor
ISL9N307AS3ST applications of single MOSFETs transistors.


  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
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