ISL9N302AS3ST

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C :

75A Tc

FET Type :

N-Channel

Drain to Source Voltage (Vdss) :

30V

Series :

UltraFET™

Terminal Position :

Single

Power Dissipation-Max :

345W Tc

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.0033Ohm

DS Breakdown Voltage-Min :

30V

Operating Temperature :

-55°C~175°C TJ

Surface Mount :

yes

Qualification Status :

COMMERCIAL

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 15V

Peak Reflow Temperature (Cel) :

Not Applicable

Drain Current-Max (Abs) (ID) :

75A

Number of Terminations :

2

RoHS Status :

ROHS3 Compliant

Vgs (Max) :

±20V

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PSSO-G2

Rds On (Max) @ Id, Vgs :

2.3m Ω @ 75A, 10V

Terminal Finish :

MATTE TIN

Number of Elements :

1

Vgs(th) (Max) @ Id :

3V @ 250µA

JESD-609 Code :

e3

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Pbfree Code :

yes

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

Reach Compliance Code :

Unknown

Moisture Sensitivity Level (MSL) :

1 (Unlimited)