ISL9N302AP3

Manufacturer :

Fairchild Semiconductor

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

11pF @ 15V

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Surface Mount :

No

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

ROHS3 Compliant

DS Breakdown Voltage-Min :

30V

Drain Current-Max (Abs) (ID) :

75A

Packaging :

Tube

Transistor Element Material :

SILICON

Case Connection :

DRAIN

Mounting Type :

Through Hole

Rds On (Max) @ Id, Vgs :

2.5m Ω @ 75A, 10V

Time@Peak Reflow Temperature-Max (s) :

Not Applicable

Transistor Application :

SWITCHING

Number of Elements :

1

Drain-source On Resistance-Max :

0.0033Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JEDEC-95 Code :

TO-220AB

Series :

UltraFET™

Operating Temperature :

-55°C~175°C TJ

Terminal Finish :

MATTE TIN

Gate Charge (Qg) (Max) @ Vgs :

300nC @ 10V

FET Type :

N-Channel

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

75A Tc

Terminal Position :

Single

Peak Reflow Temperature (Cel) :

Not Applicable

Pbfree Code :

yes

Number of Terminations :

3

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

30V

Power Dissipation-Max :

345W Tc

Vgs(th) (Max) @ Id :

3V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Reach Compliance Code :

Unknown

JESD-30 Code :

R-PSFM-T3

Qualification Status :

COMMERCIAL