ISC045N03L5SATMA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Power Dissipation (Max) :

2.5W (Ta), 30W (Tc)

Continuous Drain Current Id :

63A

Manufacturer :

Infineon

Power Dissipation :

30W

Subcategory :

MOSFETs

Supplier Device Package :

PG-TDSON-8-6

Input Capacitance (Ciss) (Max) @ Vds :

870 pF @ 15 V

Product Type :

MOSFET

Vgs(th) (Max) @ Id :

2V @ 250μA

Vgs (Max) :

±20V

Operating Temperature :

-55°C ~ 150°C (TJ)

FET Feature :

-

Qualification :

-

Package / Case :

8-PowerTDFN

Gate Charge (Qg) (Max) @ Vgs :

13 nC @ 10 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

Product Status :

Active

MSL :

-

Packaging :

Cut Tape

Number of Channels :

1 Channel

Series :

OptiMOS?

Current - Continuous Drain (Id) @ 25°C :

18A (Ta), 63A (Tc)

Transistor Polarity :

N-Channel

Base Product Number :

ISC045

Maximum Operating Temperature :

+ 150 C

Drain to Source Voltage (Vdss) :

30 V

Tradename :

OptiMOS ~ StrongIRFET

Package :

Bulk

Channel Type :

N Channel

Rds On (Max) @ Id, Vgs :

4.5mOhm @ 30A, 10V

Channel Mode :

Enhancement

Mounting Style :

SMD/SMT

Mounting Type :

Surface Mount

Minimum Operating Temperature :

- 55 C

Brand :

Infineon Technologies

Product Category :

MOSFET