IS64WV2568EDBLL-10CTLA3

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Height Seated (Max) :

1.2mm

Write Cycle Time - Word, Page :

10ns

RoHS Status :

ROHS3 Compliant

Length :

18.41mm

JESD-609 Code :

e3

Additional Feature :

PIPELINED ARCHITECTURE

Supply Voltage :

3.3V

Packaging :

Tray

Supply Voltage-Min (Vsup) :

2.4V

Standby Current-Max :

0.015A

Qualification Status :

Not Qualified

Peak Reflow Temperature (Cel) :

260

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Number of Terminations :

44

Terminal Position :

Dual

Operating Temperature :

-40°C~125°C TA

Time@Peak Reflow Temperature-Max (s) :

10

I/O Type :

COMMON

Memory Size :

2Mb 256K x 8

Memory Width :

8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.8mm

Mounting Type :

Surface Mount

Screening Level :

AEC-Q100

Power Supplies :

2.5/3.3V

Pin Count :

44

Access Time (Max) :

10 ns

Memory Type :

Volatile

HTS Code :

8542.32.00.41

Memory Format :

SRAM

ECCN Code :

3A991.B.2.A

Terminal Finish :

Tin

Number of Pins :

44

Memory Density :

2097152 bit

Voltage - Supply :

2.4V~3.6V

Factory Lead Time :

10 Weeks

Standby Voltage-Min :

2V

Surface Mount :

yes

Organization :

256KX8

Width :

10.16mm

Supply Current-Max :

0.05mA

Supply Voltage-Max (Vsup) :

3.6V

Number of Functions :

1

Memory Interface :

Parallel

Output Characteristics :

3-STATE