IS62WV6416DBLL-45B2LI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Word Size :

16b

Time@Peak Reflow Temperature-Max (s) :

40

Supply Voltage :

3.3V

Sync/Async :

ASYNCHRONOUS

Number of Terminations :

48

Access Time (Max) :

45 ns

Standby Current-Max :

0.000004A

Supply Voltage-Max (Vsup) :

3.6V

Number of Functions :

1

Supply Voltage-Min (Vsup) :

2.3V

Number of Pins :

48

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Power Supplies :

2.5/3.3V

Memory Size :

1Mb 64K x 16

Terminal Finish :

TIN SILVER COPPER

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Memory Format :

SRAM

Terminal Pitch :

0.75mm

Density :

1 Mb

Voltage - Supply :

2.3V~3.6V

Peak Reflow Temperature (Cel) :

260

RoHS Status :

ROHS3 Compliant

Memory Width :

16

Nominal Supply Current :

8mA

Address Bus Width :

16b

Number of Ports :

1

Pbfree Code :

yes

Terminal Position :

BOTTOM

JESD-609 Code :

e1

Output Characteristics :

3-STATE

I/O Type :

COMMON

Surface Mount :

yes

Length :

8mm

ECCN Code :

EAR99

Pin Count :

48

Write Cycle Time - Word, Page :

45ns

Packaging :

Tray

Operating Temperature :

-40°C~85°C TA

Package / Case :

48-TFBGA

Qualification Status :

Not Qualified