IS62WV6416ALL-55BI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Voltage - Supply :

1.7V~2.2V

Number of Functions :

1

Output Characteristics :

3-STATE

Mounting Type :

Surface Mount

JESD-609 Code :

e0

Memory Interface :

Parallel

Memory Type :

Volatile

Memory Density :

1048576 bit

Memory Width :

16

ECCN Code :

EAR99

Organization :

64KX16

Pin Count :

48

I/O Type :

COMMON

Standby Voltage-Min :

1.2V

Height Seated (Max) :

1.2mm

HTS Code :

8542.32.00.41

Memory Size :

1Mb 64K x 16

Qualification Status :

Not Qualified

Pbfree Code :

No

Width :

6mm

Terminal Finish :

Tin/Lead (Sn/Pb)

Power Supplies :

1.8/2V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Supply Voltage-Min (Vsup) :

1.7V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

8mm

Number of Terminations :

48

Access Time (Max) :

55 ns

Packaging :

Tray

Supply Voltage-Max (Vsup) :

2.2V

RoHS Status :

Non-RoHS Compliant

Supply Current-Max :

0.01mA

Write Cycle Time - Word, Page :

55ns

Surface Mount :

yes

JESD-30 Code :

R-PBGA-B48

Memory Format :

SRAM

Standby Current-Max :

0.000005A

Operating Temperature :

-40°C~85°C TA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.75mm

Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Package / Case :

48-TFBGA