IS62WV5128BLL-55T2I

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

HTS Code :

8542.32.00.41

Length :

20.95mm

Output Characteristics :

3-STATE

Surface Mount :

yes

Standby Voltage-Min :

1.2V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Pin Count :

32

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Operating Temperature :

-40°C~85°C TA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Width :

10.16mm

Voltage - Supply :

2.5V~3.6V

Terminal Finish :

Tin/Lead (Sn/Pb)

Terminal Pitch :

1.27mm

Height Seated (Max) :

1.2mm

Supply Voltage :

2.8V

Memory Width :

8

Organization :

512KX8

Supply Current-Max :

0.045mA

JESD-30 Code :

R-PDSO-G32

Memory Interface :

Parallel

Number of Functions :

1

Terminal Position :

Dual

Qualification Status :

Not Qualified

JESD-609 Code :

e0

Memory Density :

4194304 bit

Memory Size :

4Mb 512K x 8

Number of Terminations :

32

Standby Current-Max :

0.000015A

Write Cycle Time - Word, Page :

55ns

Power Supplies :

3/3.3V

Access Time (Max) :

55 ns

Packaging :

Tray

Memory Type :

Volatile

ECCN Code :

3A991.B.2.A

Pbfree Code :

No

Supply Voltage-Min (Vsup) :

2.5V

Mounting Type :

Surface Mount

I/O Type :

COMMON

RoHS Status :

Non-RoHS Compliant

Package / Case :

32-SOIC (0.400, 10.16mm Width)

Supply Voltage-Max (Vsup) :

3.6V

Memory Format :

SRAM