IS62WV25616DBLL-55TLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Access Time (Max) :

55 ns

Height Seated (Max) :

1.2mm

Qualification Status :

Not Qualified

JESD-609 Code :

e3

Voltage - Supply :

2.3V~3.6V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Width :

10.16mm

I/O Type :

COMMON

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

44

Write Cycle Time - Word, Page :

55ns

Supply Current-Max :

0.015mA

Terminal Position :

Dual

Memory Width :

16

Memory Interface :

Parallel

Packaging :

Tape and Reel (TR)

Supply Voltage-Max (Vsup) :

3.6V

Memory Format :

SRAM

Surface Mount :

yes

HTS Code :

8542.32.00.41

Length :

18.41mm

Memory Density :

4194304 bit

Standby Current-Max :

0.000007A

Number of Terminations :

44

Pin Count :

44

RoHS Status :

ROHS3 Compliant

Output Characteristics :

3-STATE

Number of Functions :

1

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Min (Vsup) :

2.3V

Terminal Pitch :

0.8mm

Memory Type :

Volatile

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Standby Voltage-Min :

1.2V

Terminal Finish :

MATTE TIN

Pbfree Code :

yes

Mounting Type :

Surface Mount

Organization :

256KX16

ECCN Code :

3A991.B.2.A

Memory Size :

4Mb 256K x 16

Operating Temperature :

-40°C~85°C TA

Power Supplies :

2.5/3.3V