IS61WV51216EEBLL-10T2LI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Organization :

512KX16

Access Time (Max) :

10 ns

Memory Format :

SRAM

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.5mm

Memory Width :

16

Supply Voltage-Min (Vsup) :

2.4V

Write Cycle Time - Word, Page :

10ns

Supply Voltage-Max (Vsup) :

3.6V

Operating Temperature :

-40°C~85°C TA

Memory Size :

8Mb 512K x 16

Number of Terminations :

48

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Length :

18.4mm

Memory Interface :

Parallel

Number of Functions :

1

Package / Case :

48-TFSOP (0.724, 18.40mm Width)

Height Seated (Max) :

1.2mm

Width :

12mm

Surface Mount :

yes

Factory Lead Time :

8 Weeks

JESD-30 Code :

R-PDSO-G48

Supply Voltage :

3V

Voltage - Supply :

2.4V~3.6V

HTS Code :

8542.32.00.41

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Density :

8388608 bit

Mounting Type :

Surface Mount

Terminal Position :

Dual