IS61WV51216EEBLL-10B2LI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Packaging :

Tape and Reel (TR)

Operating Temperature :

-40°C~85°C TA

Terminal Position :

BOTTOM

Memory Width :

16

Height Seated (Max) :

1.2mm

Write Cycle Time - Word, Page :

10ns

Length :

8mm

Mounting Type :

Surface Mount

Memory Density :

8388608 bit

Surface Mount :

yes

Supply Voltage-Min (Vsup) :

2.4V

Access Time (Max) :

10 ns

Number of Terminations :

48

Voltage - Supply :

2.4V~3.6V

Memory Type :

Volatile

JESD-609 Code :

e1

Organization :

512KX16

Terminal Pitch :

0.75mm

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Memory Interface :

Parallel

Terminal Finish :

Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)

Memory Format :

SRAM

RoHS Status :

ROHS3 Compliant

Width :

6mm

Package / Case :

48-TFBGA

Factory Lead Time :

8 Weeks

Supply Voltage :

3V

Number of Functions :

1

JESD-30 Code :

R-PBGA-B48

Memory Size :

8Mb 512K x 16

Supply Voltage-Max (Vsup) :

3.6V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Moisture Sensitivity Level (MSL) :

3 (168 Hours)