IS61QDP2B22M18A-333M3L

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Standby Voltage-Min :

1.7V

Factory Lead Time :

12 Weeks

ECCN Code :

3A991.B.2.A

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

36Mb 2M x 18

Organization :

2MX18

Voltage - Supply :

1.71V~1.89V

Qualification Status :

Not Qualified

Supply Voltage :

1.8V

Power Supplies :

1.5/1.81.8V

Clock Frequency :

333MHz

Terminal Position :

BOTTOM

RoHS Status :

ROHS3 Compliant

Standby Current-Max :

0.29A

Width :

15mm

Memory Format :

SRAM

Access Time :

8.4ns

Operating Temperature :

0°C~70°C TA

Memory Type :

Volatile

Pin Count :

165

Number of Functions :

1

Memory Width :

18

Package / Case :

165-LBGA

Supply Voltage-Max (Vsup) :

1.89V

Length :

17mm

I/O Type :

Separate

Supply Voltage-Min (Vsup) :

1.71V

Additional Feature :

PIPELINED ARCHITECTURE

Supply Current-Max :

1.15mA

Output Characteristics :

3-STATE

Memory Interface :

Parallel

Number of Terminations :

165

Surface Mount :

yes

Packaging :

Tray

Number of Pins :

165

HTS Code :

8542.32.00.41

Mounting Type :

Surface Mount

Height Seated (Max) :

1.4mm

Terminal Pitch :

1mm

Memory Density :

37748736 bit