IS61NVP25672-200B1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Height Seated (Max) :

1.95mm

JESD-609 Code :

e0

Access Time :

3.1ns

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

18Mb 256K x 72

Memory Width :

72

Density :

18 Mb

Operating Temperature :

0°C~70°C TA

Supply Voltage :

2.5V

Number of Ports :

8

RoHS Status :

ROHS3 Compliant

Packaging :

Tray

Supply Current-Max :

0.55mA

Memory Type :

Volatile

Radiation Hardening :

No

Output Characteristics :

3-STATE

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

2.625V

Surface Mount :

yes

Standby Current-Max :

0.06A

Number of Functions :

1

Terminal Position :

BOTTOM

Package / Case :

209-BGA

Peak Reflow Temperature (Cel) :

240

Pin Count :

209

I/O Type :

COMMON

Time@Peak Reflow Temperature-Max (s) :

10

Number of Terminations :

209

Voltage - Supply :

2.375V~2.625V

Supply Voltage-Min (Vsup) :

2.375V

Mounting Type :

Surface Mount

Length :

22mm

Clock Frequency :

200MHz

Organization :

256KX72

Additional Feature :

PIPELINED ARCHITECTURE

Pbfree Code :

No

ECCN Code :

3A991.B.2.A

Memory Format :

SRAM

Address Bus Width :

18b

Terminal Pitch :

1mm

Operating Supply Voltage :

2.5V

Terminal Finish :

Tin/Lead (Sn/Pb)

Number of Pins :

209