IS61NVF51236-7.5TQI
- Mfr.Part #
- IS61NVF51236-7.5TQI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 100-LQFP
- Datasheet
- Download
- Description
- IC SRAM 18MBIT PARALLEL 100TQFP
- Stock
- 32,317
- In Stock :
- 32,317
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Number of Functions :
- 1
- Surface Mount :
- yes
- Standby Voltage-Min :
- 2.38V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Memory Format :
- SRAM
- Supply Current-Max :
- 0.475mA
- Qualification Status :
- Not Qualified
- Standby Current-Max :
- 0.075A
- Supply Voltage-Min (Vsup) :
- 2.375V
- RoHS Status :
- Non-RoHS Compliant
- ECCN Code :
- 3A991.B.2.A
- Peak Reflow Temperature (Cel) :
- 240
- HTS Code :
- 8542.32.00.41
- Clock Frequency :
- 117MHz
- Voltage - Supply :
- 2.375V~2.625V
- Length :
- 20mm
- Width :
- 14mm
- Pbfree Code :
- No
- I/O Type :
- COMMON
- Package / Case :
- 100-LQFP
- Memory Density :
- 18874368 bit
- Packaging :
- Tray
- Pin Count :
- 100
- Additional Feature :
- FLOW-THROUGH ARCHITECTURE
- Height Seated (Max) :
- 1.6mm
- Output Characteristics :
- 3-STATE
- Supply Voltage :
- 2.5V
- Memory Width :
- 36
- Supply Voltage-Max (Vsup) :
- 2.625V
- Memory Interface :
- Parallel
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Power Supplies :
- 2.5V
- Number of Pins :
- 100
- Terminal Pitch :
- 0.65mm
- Number of Terminations :
- 100
- Memory Type :
- Volatile
- Organization :
- 512KX36
- Memory Size :
- 18Mb 512K x 36
- Access Time :
- 7.5ns
- Terminal Position :
- QUAD
- Mounting Type :
- Surface Mount
- JESD-609 Code :
- e0
- Operating Temperature :
- -40°C~85°C TA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Datasheets
- IS61NVF51236-7.5TQI
Memory Integrated Silicon Solution, Inc. (ISSI) IS61NVF51236-7.5TQI Overview
The IS61NVF51236-7.5TQI from Integrated Silicon Solution, Inc. (ISSI) is a high-performance 18Mbit SRAM chip designed for demanding applications that require quick access to large volumes of data. Housed in a compact 100-pin TQFP package, this memory module utilizes a parallel interface to achieve high-speed data transfer rates, making it an ideal choice for advanced computing systems. Its robust design and efficient power consumption ensure reliability and cost-effectiveness, making the Memory Integrated Silicon Solution, Inc. (ISSI) IS61NVF51236-7.5TQI a preferred choice for manufacturers seeking performance and scalability.
IS61NVF51236-7.5TQI Features
This SRAM device offers 18Mbit of storage, allowing for extensive data manipulation and retention without the need for periodic refresh. Operating at a speed grade of 7.5ns, it provides rapid access times that can greatly enhance the efficiency of system operations. The use of a parallel interface facilitates faster data communication compared to serial alternatives, which is crucial for high-speed computing tasks. Additionally, its 100-pin TQFP packaging is designed for a minimized footprint on system boards, making it suitable for dense circuit designs.
IS61NVF51236-7.5TQI Applications
- Networking Equipment: Used in routers, switches, and network cards where high-speed data buffering is needed to manage bandwidth and handle large volumes of data efficiently.
- Telecommunications Systems: Supports high-speed telecom infrastructure, helping in data storage for systems such as signal processing and real-time communication analysis.
- Aerospace and Defense: Ideal for applications requiring robust, high-speed data access in challenging environments, contributing to the performance of onboard systems in aircraft and military hardware.
- Medical Imaging Devices: Enhances the capability of devices such as CT scanners and MRI machines by providing quick access to large data sets required for high-resolution imaging.
- Industrial Automation: Critical in PLCs and other control systems where rapid data retrieval is necessary to maintain operational efficiency and machine performance.
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