IS61NVF51236-7.5B3I

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Finish :

Tin/Lead (Sn/Pb)

Memory Format :

SRAM

Memory Interface :

Parallel

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Pbfree Code :

No

Width :

13mm

Number of Terminations :

165

Standby Current-Max :

0.075A

Package / Case :

165-TBGA

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height Seated (Max) :

1.2mm

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

18Mb 512K x 36

JESD-609 Code :

e0

Length :

15mm

Power Supplies :

2.5V

Supply Current-Max :

0.475mA

Terminal Pitch :

1mm

Organization :

512KX36

Supply Voltage :

2.5V

Voltage - Supply :

2.375V~2.625V

ECCN Code :

3A991.B.2.A

Access Time :

7.5ns

Additional Feature :

FLOW-THROUGH ARCHITECTURE

RoHS Status :

ROHS3 Compliant

Packaging :

Tray

Memory Width :

36

Mounting Type :

Surface Mount

Memory Density :

18874368 bit

Supply Voltage-Min (Vsup) :

2.375V

Qualification Status :

Not Qualified

Supply Voltage-Max (Vsup) :

2.625V

Memory Type :

Volatile

Operating Temperature :

-40°C~85°C TA

Clock Frequency :

117MHz

Standby Voltage-Min :

2.38V

Number of Functions :

1

Surface Mount :

yes

Number of Pins :

165

Pin Count :

165

Output Characteristics :

3-STATE

HTS Code :

8542.32.00.41

I/O Type :

COMMON