IS61NLF25672-6.5B1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Additional Feature :

FLOW-THROUGH ARCHITECTURE

HTS Code :

8542.32.00.41

Number of Terminations :

209

Number of Functions :

1

Voltage - Supply :

3.135V~3.465V

Clock Frequency :

133MHz

Package / Case :

209-BGA

Memory Format :

SRAM

Memory Interface :

Parallel

RoHS Status :

ROHS3 Compliant

Memory Density :

18874368 bit

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Qualification Status :

Not Qualified

Supply Voltage-Min (Vsup) :

3.135V

Surface Mount :

yes

Supply Voltage :

3.3V

Memory Width :

72

Pin Count :

209

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Memory Type :

Volatile

JESD-30 Code :

R-PBGA-B209

Terminal Finish :

Tin/Lead (Sn/Pb)

JESD-609 Code :

e0

Packaging :

Tray

Width :

14mm

Access Time :

6.5ns

Memory Size :

18Mb 256K x 72

ECCN Code :

3A991.B.2.A

Terminal Position :

BOTTOM

Terminal Pitch :

1mm

Supply Voltage-Max (Vsup) :

3.465V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Height Seated (Max) :

1.95mm

Pbfree Code :

No

Mounting Type :

Surface Mount

Operating Temperature :

0°C~70°C TA

Organization :

256KX72

Length :

22mm