IS61LV2568L-10TL-TR

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

10ns

Terminal Position :

Dual

Memory Format :

SRAM

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Number of Functions :

1

Word Size :

8B

Radiation Hardening :

No

Sync/Async :

ASYNCHRONOUS

Supply Voltage-Max (Vsup) :

3.63V

Memory Size :

2Mb 256K x 8

Operating Supply Voltage :

3.3V

Pbfree Code :

yes

Terminal Finish :

MATTE TIN

Nominal Supply Current :

60mA

Organization :

256KX8

Memory Interface :

Parallel

Operating Temperature :

0°C~70°C TA

Package / Case :

44-TSOP (0.400, 10.16mm Width)

Packaging :

Tape and Reel (TR)

Number of Ports :

1

Number of Pins :

44

Memory Type :

Volatile

Terminal Pitch :

0.8mm

JESD-609 Code :

e3

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

Number of Terminations :

44

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Voltage - Supply :

3.135V~3.6V

Pin Count :

44

Address Bus Width :

18b

Density :

2 Mb

Supply Voltage-Min (Vsup) :

2.97V

Memory Width :

8

Supply Voltage :

3.3V

Mounting Type :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40