IS61LF51236A-6.5B2LI

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Mfr.Part #
IS61LF51236A-6.5B2LI
Manufacturer
Integrated Silicon Solution, Inc. (ISSI)
Package / Case
119-BBGA
Datasheet
Download
Description
IC SRAM 18MBIT PARALLEL 119PBGA
Stock
31,844
In Stock :
31,844

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Manufacturer :
Integrated Silicon Solution, Inc. (ISSI)
Product Category :
Memory
Height Seated (Max) :
3.5mm
Output Characteristics :
3-STATE
Mounting Type :
Surface Mount
Memory Size :
18Mb 512K x 36
RoHS Status :
RoHS Compliant
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Max Frequency :
133MHz
Memory Density :
18874368 bit
ECCN Code :
3A991.B.2.A
Memory Format :
SRAM
Qualification Status :
Not Qualified
HTS Code :
8542.32.00.41
Terminal Position :
BOTTOM
Terminal Pitch :
1.27mm
Standby Current-Max :
0.000075A
Organization :
512KX36
I/O Type :
COMMON
Supply Voltage :
3.3V
Packaging :
Tray
Length :
22mm
Pin Count :
119
Standby Voltage-Min :
3.14V
Memory Type :
Volatile
Memory Width :
36
Moisture Sensitivity Level (MSL) :
2 (1 Year)
Power Supplies :
2.5/3.33.3V
Memory Interface :
Parallel
Operating Temperature :
-40°C~85°C TA
Voltage - Supply :
3.135V~3.6V
Number of Functions :
1
Supply Voltage-Min (Vsup) :
3.135V
Number of Pins :
119
Number of Terminations :
119
Additional Feature :
PIPELINED ARCHITECTURE, FLOW-THROUGH
Supply Current-Max :
0.275mA
Pbfree Code :
yes
Time@Peak Reflow Temperature-Max (s) :
40
Width :
14mm
Access Time :
6.5ns
Supply Voltage-Max (Vsup) :
3.465V
Package / Case :
119-BBGA
Peak Reflow Temperature (Cel) :
260
Surface Mount :
yes
JESD-609 Code :
e1
Introducing Memory Integrated Silicon Solution, Inc. (ISSI) IS61LF51236A-6.5B2LI from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Operating Temperature:-40°C~85°C TA, Number of Pins:119, Number of Terminations:119, Package / Case:119-BBGA, IS61LF51236A-6.5B2LI pinout, IS61LF51236A-6.5B2LI datasheet PDF, IS61LF51236A-6.5B2LI amp .Beyond Memory Integrated Silicon Solution, Inc. (ISSI) IS61LF51236A-6.5B2LI ,we also offer AT25SF081B-SSHB-T, AT25SF041B-SSHB-T, AT25SF041B-SHB-T, Our vast inventory has you covered. Contact us now for immediate solutions.

Integrated Silicon Solution, Inc. (ISSI) IS61LF51236A-6.5B2LI


Memory Integrated Silicon Solution, Inc. (ISSI) IS61LF51236A-6.5B2LI Overview

The Memory Integrated Silicon Solution, Inc. (ISSI) IS61LF51236A-6.5B2LI is a high-performance 18Mbit SRAM component, packaged in a 119-pin PBGA format. This integrated circuit is designed for optimal speed and reliability, operating at a clock frequency of 6.5ns, which makes it suitable for applications requiring fast access and high throughput. The product leverages advanced silicon technology to provide stable and efficient performance under a wide range of environmental conditions, making it a robust choice for sophisticated electronic systems.

IS61LF51236A-6.5B2LI Features

The IS61LF51236A-6.5B2LI boasts several compelling features that enhance its appeal in demanding applications. These include its fast access time of 6.5 nanoseconds, a parallel interface for straightforward integration into system architectures, and its compact 119-pin PBGA packaging that ensures a reduced footprint on system boards. Additionally, the device's stability and performance are supported by ISSI's commitment to quality and reliability in memory products.

IS61LF51236A-6.5B2LI Applications

  • High-Speed Computing: Utilized in servers and high-performance computers where rapid access to temporary data storage is crucial.
  • Advanced Networking Equipment: Employs in routers and switches to enhance buffering and caching capabilities, facilitating faster data flow and improved network efficiency.
  • Industrial Applications: Integrated into automation systems for real-time processing capabilities in manufacturing and industrial settings.
  • Telecommunications: Used in telecommunications infrastructure to support quick data retrieval and storage, ensuring efficient network operations and service delivery.
  • Aerospace and Defense: Applicable in mission-critical aerospace and defense systems requiring robust, high-speed memory solutions for optimal performance in extreme conditions.
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