IS46TR85120AL-125KBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Voltage - Supply :

1.283V ~ 1.45V

Series :

Automotive, AEC-Q100

Width :

9 mm

Subcategory :

DRAMs

Mounting Type :

Surface Mount

Organization :

512MX8

Package Shape :

RECTANGULAR

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Screening Level :

AEC-Q100

Product Status :

Obsolete

Number of Words :

536870912 words

Manufacturer :

Integrated Silicon Solution Inc

Memory Density :

4294967296 bit

Access Mode :

MULTI BANK PAGE BURST

Seated Height-Max :

1.2 mm

Terminal Pitch :

0.8 mm

Access Time :

20 ns

Clock Frequency :

800 MHz

Technology :

SDRAM - DDR3L

Supply Current-Max :

0.243 mA

Surface Mount :

yes

Memory Width :

8

Number of Ports :

1

Sequential Burst Length :

4,8

Supply Voltage-Max (Vsup) :

1.45 V

Number of Terminals :

78

Supply Voltage-Min (Vsup) :

1.283 V

Reach Compliance Code :

Compliant

Memory Organization :

512M x 8

I/O Type :

COMMON

Interleaved Burst Length :

4,8

Refresh Cycles :

8192

Package :

Tray

Length :

10.5 mm

Memory Type :

Volatile

Terminal Position :

BOTTOM

Temperature Grade :

Industrial

Operating Temperature :

-40°C ~ 105°C (TC)

Operating Mode :

SYNCHRONOUS

Memory Size :

4Gbit

Memory Interface :

Parallel

Terminal Form :

Ball

Self Refresh :

yes

Memory Format :

DRAM

Write Cycle Time - Word, Page :

15ns

Power Supplies :

1.35 V

JESD-30 Code :

R-PBGA-B78

Output Characteristics :

3-STATE

Supplier Device Package :

78-TWBGA (9x10.5)

Package / Case :

78-TFBGA

Qualification Status :

Not Qualified

Number of Functions :

1

Memory IC Type :

DDR DRAM

Base Product Number :

IS46TR85120

Standby Current-Max :

0.016 A