IS46DR16128C-3DBLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Number of Terminations :

84

Voltage - Supply :

1.7V~1.9V

Length :

12.5mm

Packaging :

Tray

Standby Current-Max :

0.03A

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Supply Voltage-Max (Vsup) :

1.9V

Surface Mount :

yes

Package / Case :

84-TFBGA

Terminal Position :

BOTTOM

Organization :

128MX16

Memory Interface :

Parallel

Refresh Cycles :

8192

Memory Width :

16

Terminal Pitch :

0.8mm

Output Characteristics :

3-STATE

Access Time :

450ps

Factory Lead Time :

8 Weeks

Interleaved Burst Length :

48

Sequential Burst Length :

48

Write Cycle Time - Word, Page :

15ns

Supply Voltage :

1.8V

I/O Type :

COMMON

Mounting Type :

Surface Mount

Supply Voltage-Min (Vsup) :

1.7V

Width :

8mm

Power Supplies :

1.8V

Clock Frequency :

333MHz

Number of Ports :

1

ECCN Code :

EAR99

Screening Level :

AEC-Q100

Supply Current-Max :

0.485mA

Memory Size :

2Gb 128M x 16

Memory Type :

Volatile

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Format :

DRAM

Operating Mode :

SYNCHRONOUS

Operating Temperature :

-40°C~85°C TA

Height Seated (Max) :

1.2mm

Qualification Status :

Not Qualified

Memory Density :

2147483648 bit

JESD-30 Code :

R-PBGA-B84