IS46R86400D-6BLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

JESD-609 Code :

e1

Refresh Cycles :

8192

Organization :

64MX8

Screening Level :

AEC-Q100

Memory Width :

8

Operating Temperature :

-40°C~85°C TA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Standby Current-Max :

0.025A

Memory Size :

512Mb 64M x 8

Terminal Pitch :

1mm

Voltage - Supply :

2.3V~2.7V

Additional Feature :

AUTO/SELF REFRESH

Surface Mount :

yes

Clock Frequency :

166MHz

Packaging :

Tray

Output Characteristics :

3-STATE

Number of Functions :

1

Package / Case :

60-TFBGA

Length :

13mm

Supply Voltage :

2.5V

Factory Lead Time :

10 Weeks

Memory Type :

Volatile

Access Time :

700ps

HTS Code :

8542.32.00.28

Interleaved Burst Length :

248

Terminal Position :

BOTTOM

Write Cycle Time - Word, Page :

15ns

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Terminal Finish :

TIN SILVER COPPER

Power Supplies :

2.5V

Peak Reflow Temperature (Cel) :

260

Supply Current-Max :

0.37mA

Qualification Status :

Not Qualified

Memory Interface :

Parallel

Time@Peak Reflow Temperature-Max (s) :

40

Height Seated (Max) :

1.2mm

Number of Terminations :

60

Number of Pins :

60

Memory Format :

DRAM

Data Bus Width :

8B

Operating Mode :

SYNCHRONOUS

Pin Count :

60

I/O Type :

COMMON

RoHS Status :

ROHS3 Compliant

Sequential Burst Length :

248

Pbfree Code :

yes

Supply Voltage-Max (Vsup) :

2.7V

Memory Density :

536870912 bit

Supply Voltage-Min (Vsup) :

2.3V

Number of Ports :

1