IS46R16320D-6TLA1
- Mfr.Part #
- IS46R16320D-6TLA1
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PAR 66TSOP II
- Stock
- 5,726
- In Stock :
- 5,726
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Screening Level :
- AEC-Q100
- Length :
- 22.22mm
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Mount :
- Surface Mount
- Pin Count :
- 66
- Sequential Burst Length :
- 248
- Data Bus Width :
- 16b
- Supply Voltage-Max (Vsup) :
- 2.7V
- Pbfree Code :
- yes
- Memory Format :
- DRAM
- Operating Supply Voltage :
- 2.5V
- Terminal Position :
- Dual
- Memory Size :
- 512Mb 32M x 16
- Operating Temperature :
- -40°C~85°C TA
- Terminal Finish :
- MATTE TIN
- Packaging :
- Tray
- Memory Width :
- 16
- ECCN Code :
- EAR99
- Terminal Pitch :
- 0.65mm
- Mounting Type :
- Surface Mount
- HTS Code :
- 8542.32.00.28
- Number of Ports :
- 1
- Density :
- 512 Mb
- JESD-609 Code :
- e3
- Address Bus Width :
- 15b
- Height Seated (Max) :
- 1.2mm
- Write Cycle Time - Word, Page :
- 15ns
- Output Characteristics :
- 3-STATE
- Nominal Supply Current :
- 370mA
- Organization :
- 32MX16
- Number of Terminations :
- 66
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Functions :
- 1
- Clock Frequency :
- 166MHz
- Memory Interface :
- Parallel
- Voltage - Supply :
- 2.3V~2.7V
- Interleaved Burst Length :
- 248
- Radiation Hardening :
- No
- Memory Type :
- Volatile
- Access Time :
- 700ps
- Number of Pins :
- 66
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Factory Lead Time :
- 10 Weeks
- RoHS Status :
- ROHS3 Compliant
- Supply Voltage :
- 2.5V
- Refresh Cycles :
- 8192
- Supply Voltage-Min (Vsup) :
- 2.3V
- Standby Current-Max :
- 0.025A
- I/O Type :
- COMMON
- Datasheets
- IS46R16320D-6TLA1
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