IS46DR16640B-3DBLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Mounting Type :

Surface Mount

Memory Format :

DRAM

Additional Feature :

AUTO/SELF REFRESH

Screening Level :

AEC-Q100

Density :

1 Gb

Memory Width :

16

Number of Ports :

1

Terminal Pitch :

0.8mm

Memory Type :

Volatile

Lead Free :

Lead Free

Number of Pins :

84

RoHS Status :

ROHS3 Compliant

HTS Code :

8542.32.00.32

Clock Frequency :

333MHz

Supply Voltage-Max (Vsup) :

1.9V

Factory Lead Time :

8 Weeks

Package / Case :

84-TFBGA

Refresh Cycles :

8192

Packaging :

Tray

Supply Voltage-Min (Vsup) :

1.7V

Height Seated (Max) :

1.2mm

Operating Temperature :

-40°C~85°C TA

Access Time :

450ps

Supply Voltage :

1.8V

ECCN Code :

EAR99

Number of Functions :

1

Output Characteristics :

3-STATE

Write Cycle Time - Word, Page :

15ns

Operating Supply Voltage :

1.8V

Organization :

64MX16

Data Bus Width :

16b

Sequential Burst Length :

48

Radiation Hardening :

No

Memory Size :

1Gb 64M x 16

Number of Terminations :

84

Address Bus Width :

16b

Standby Current-Max :

0.015A

Memory Interface :

Parallel

Mount :

Surface Mount

Interleaved Burst Length :

48

Terminal Position :

BOTTOM

Voltage - Supply :

1.7V~1.9V

Nominal Supply Current :

220mA

I/O Type :

COMMON

Length :

12.5mm

Moisture Sensitivity Level (MSL) :

3 (168 Hours)