IS46DR16320D-3DBLA2

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

JESD-609 Code :

e1

Memory Interface :

Parallel

Nominal Supply Current :

230mA

Refresh Cycles :

8192

Terminal Position :

BOTTOM

Output Characteristics :

3-STATE

Package / Case :

84-TFBGA

Supply Voltage-Max (Vsup) :

1.9V

Height Seated (Max) :

1.2mm

Operating Mode :

SYNCHRONOUS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Terminations :

84

Sequential Burst Length :

48

Address Bus Width :

13b

Memory Size :

512Mb 32M x 16

Number of Pins :

84

Mounting Type :

Surface Mount

Operating Temperature :

-40°C~105°C TA

Density :

512 Mb

Clock Frequency :

333MHz

Qualification Status :

Not Qualified

Additional Feature :

PROGRAMMABLE CAS LATENCY

Packaging :

Tray

Factory Lead Time :

8 Weeks

Number of Ports :

1

Operating Supply Voltage :

1.8V

Supply Voltage-Min (Vsup) :

1.7V

Supply Voltage :

1.8V

Write Cycle Time - Word, Page :

15ns

Length :

12.5mm

Voltage - Supply :

1.7V~1.9V

Memory Format :

DRAM

Organization :

32MX16

Mount :

Surface Mount

Memory Type :

Volatile

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Number of Functions :

1

Memory Width :

16

Access Time :

450ps

Interleaved Burst Length :

48

Terminal Pitch :

0.8mm

Terminal Finish :

TIN SILVER COPPER

I/O Type :

COMMON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

HTS Code :

8542.32.00.28

Standby Current-Max :

0.025A