IS45S16160D-7TLA1

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Supply Voltage-Max (Vsup) :

3.6V

Radiation Hardening :

No

Standby Current-Max :

0.003A

RoHS Status :

RoHS Compliant

Operating Supply Voltage :

3.3V

Height Seated (Max) :

1.2mm

Operating Temperature :

-40°C~85°C TA

Data Bus Width :

16b

Max Supply Current :

130mA

JESD-609 Code :

e3

Refresh Cycles :

8192

Clock Frequency :

143MHz

Number of Terminations :

54

Interleaved Burst Length :

1248

Number of Ports :

1

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Pins :

54

Pbfree Code :

yes

Output Characteristics :

3-STATE

ECCN Code :

EAR99

Supply Voltage-Min (Vsup) :

3V

Memory Format :

DRAM

Pin Count :

54

Nominal Supply Current :

130mA

Memory Interface :

Parallel

Mount :

Surface Mount

Terminal Position :

Dual

Access Time :

5.4ns

Mounting Type :

Surface Mount

Length :

22.22mm

Memory Type :

Volatile

Voltage - Supply :

3V~3.6V

Packaging :

Tray

Sequential Burst Length :

1248FP

Terminal Pitch :

0.8mm

Terminal Finish :

Matte Tin (Sn) - annealed

Memory Width :

16

Organization :

16MX16

Additional Feature :

AUTO/SELF REFRESH

Package / Case :

54-TSOP (0.400, 10.16mm Width)

Time@Peak Reflow Temperature-Max (s) :

10

Address Bus Width :

15b

Memory Size :

256Mb 16M x 16

Supply Voltage :

3.3V

I/O Type :

COMMON

Density :

256 Mb

Number of Functions :

1