IS43R86400E-6BL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Access Time :

700ps

Write Cycle Time - Word, Page :

15ns

Memory Interface :

Parallel

Supply Voltage-Max (Vsup) :

2.7V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Width :

8mm

Memory Format :

DRAM

Number of Functions :

1

Memory Type :

Volatile

Memory Size :

512Mb 64M x 8

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Packaging :

Tray

Terminal Position :

BOTTOM

Organization :

64MX8

Package / Case :

60-TFBGA

Operating Temperature :

0°C~70°C TA

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Supply Voltage-Min (Vsup) :

2.3V

Mounting Type :

Surface Mount

Voltage - Supply :

2.3V~2.7V

RoHS Status :

ROHS3 Compliant

Surface Mount :

yes

Height Seated (Max) :

1.2mm

Number of Terminations :

60

Additional Feature :

PROGRAMMABLE CAS LATENCY; AUTO/SELF REFRESH

Terminal Pitch :

1mm

Factory Lead Time :

8 Weeks

Memory Density :

536870912 bit

Number of Ports :

1

JESD-30 Code :

R-PBGA-B60

Supply Voltage :

2.5V

Operating Mode :

SYNCHRONOUS

Memory Width :

8

Clock Frequency :

166MHz

Length :

13mm