IS43R86400D-5B

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Terminal Pitch :

1mm

Address Bus Width :

15b

Mounting Type :

Surface Mount

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Nominal Supply Current :

430mA

Supply Voltage-Max (Vsup) :

2.7V

I/O Type :

COMMON

Number of Functions :

1

Memory Interface :

Parallel

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Sequential Burst Length :

248

Operating Mode :

SYNCHRONOUS

Output Characteristics :

3-STATE

Supply Voltage-Min (Vsup) :

2.5V

Write Cycle Time - Word, Page :

15ns

Memory Width :

8

Standby Current-Max :

0.025A

Terminal Finish :

TIN SILVER COPPER

Length :

13mm

Data Bus Width :

8B

Refresh Cycles :

8192

Interleaved Burst Length :

248

Pin Count :

60

Supply Voltage :

2.6V

JESD-609 Code :

e1

Access Time :

700ps

Pbfree Code :

yes

RoHS Status :

ROHS3 Compliant

Power Supplies :

2.6V

Factory Lead Time :

8 Weeks

Memory Size :

512Mb 64M x 8

Voltage - Supply :

2.5V~2.7V

Organization :

64MX8

Clock Frequency :

200MHz

Density :

512 Mb

Height Seated (Max) :

1.2mm

Memory Format :

DRAM

Packaging :

Tray

Package / Case :

60-TFBGA

Number of Ports :

1

HTS Code :

8542.32.00.28

Mount :

Surface Mount

Operating Temperature :

-40°C~85°C TA

Number of Pins :

60

Number of Terminations :

60

Additional Feature :

AUTO/SELF REFRESH

Memory Type :

Volatile