IS43R83200B-5TL
- Mfr.Part #
- IS43R83200B-5TL
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 66-TSSOP (0.400, 10.16mm Width)
- Datasheet
- Download
- Description
- IC DRAM 256MBIT PAR 66TSOP II
- Stock
- 18,814
- In Stock :
- 18,814
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Power Supplies :
- 2.5V
- Packaging :
- Tray
- Data Bus Width :
- 8B
- Supply Current-Max :
- 0.29mA
- Supply Voltage-Max (Vsup) :
- 2.7V
- Operating Mode :
- SYNCHRONOUS
- RoHS Status :
- RoHS Compliant
- Standby Current-Max :
- 0.03A
- Package / Case :
- 66-TSSOP (0.400, 10.16mm Width)
- Voltage - Supply :
- 2.3V~2.7V
- Number of Functions :
- 1
- I/O Type :
- COMMON
- Pbfree Code :
- yes
- Memory Density :
- 268435456 bit
- Interleaved Burst Length :
- 248
- Memory Type :
- Volatile
- Qualification Status :
- Not Qualified
- Sequential Burst Length :
- 248
- Time@Peak Reflow Temperature-Max (s) :
- 40
- HTS Code :
- 8542.32.00.24
- Output Characteristics :
- 3-STATE
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- ECCN Code :
- EAR99
- Supply Voltage-Min (Vsup) :
- 2.3V
- Peak Reflow Temperature (Cel) :
- 260
- JESD-609 Code :
- e3
- Mounting Type :
- Surface Mount
- Number of Terminations :
- 66
- Number of Pins :
- 66
- Memory Format :
- DRAM
- Access Time :
- 700ps
- Memory Size :
- 256Mb 32M x 8
- Memory Width :
- 8
- Memory Interface :
- Parallel
- Terminal Finish :
- Matte Tin (Sn) - annealed
- Organization :
- 32MX8
- Length :
- 22.22mm
- Additional Feature :
- AUTO/SELF REFRESH
- Number of Ports :
- 1
- Write Cycle Time - Word, Page :
- 15ns
- Height Seated (Max) :
- 1.2mm
- Pin Count :
- 66
- Terminal Pitch :
- 0.65mm
- Surface Mount :
- yes
- Clock Frequency :
- 200MHz
- Terminal Position :
- Dual
- Supply Voltage :
- 2.5V
- Operating Temperature :
- 0°C~70°C TA
- Refresh Cycles :
- 8192
- Datasheets
- IS43R83200B-5TL
Memory Integrated Silicon Solution, Inc. (ISSI) IS43R83200B-5TL Overview
Introducing the cutting-edge IC DRAM 256MBIT PAR 66TSOP II by Integrated Silicon Solution, Inc. (ISSI), the forefront leader in memory solutions. Engineered with meticulous precision, this dynamic random-access memory (DRAM) module is designed to elevate performance and reliability in a diverse array of applications. Featuring unparalleled efficiency and versatility, the IS43R83200B-5TL sets the standard for excellence in memory integration.
IS43R83200B-5TL Features
- High-capacity 256MBIT DRAM module
- Optimized PAR (Partial Array Refresh) technology for enhanced reliability
- Compact 66TSOP II package for seamless integration
- Precision-engineered design for consistent performance
- Wide operating temperature range for adaptable deployment
- Robust construction ensures long-term durability
IS43R83200B-5TL Applications
- Industrial Automation: Empower industrial control systems with reliable memory for seamless operation in demanding environments. The IS43R83200B-5TL ensures data integrity and system stability in manufacturing automation, robotics, and process control applications.
- Telecommunications Infrastructure: Enhance network infrastructure with high-capacity memory solutions. The IS43R83200B-5TL enables efficient data processing and storage in telecommunications equipment, including routers, switches, and base stations, ensuring uninterrupted communication networks.
- Embedded Systems: Elevate the performance of embedded systems across various sectors, including automotive, medical devices, and consumer electronics. With its compact form factor and robust design, the IS43R83200B-5TL delivers reliable memory solutions for embedded applications, ensuring seamless functionality and data integrity.
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