IS43R16800C-5TL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Output Characteristics :

3-STATE

Number of Terminations :

66

Terminal Position :

Dual

Number of Pins :

66

Pin Count :

66

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Supply Voltage-Max (Vsup) :

2.7V

Number of Functions :

1

Density :

128 Mb

Number of Ports :

1

ECCN Code :

EAR99

Terminal Pitch :

0.65mm

Length :

22.22mm

Interleaved Burst Length :

248

Refresh Cycles :

4096

Memory Interface :

Parallel

Packaging :

Tray

HTS Code :

8542.32.00.02

Moisture Sensitivity Level (MSL) :

2 (1 Year)

Sequential Burst Length :

248

Operating Supply Voltage :

2.5V

Address Bus Width :

14b

Peak Reflow Temperature (Cel) :

260

Memory Width :

16

Supply Voltage :

2.5V

Supply Voltage-Min (Vsup) :

2.3V

Memory Type :

Volatile

Data Bus Width :

16b

Memory Format :

DRAM

Access Time :

700ps

RoHS Status :

RoHS Compliant

Voltage - Supply :

2.3V~2.7V

Memory Size :

128Mb 8M x 16

Operating Temperature :

0°C~70°C TA

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

10

Nominal Supply Current :

205mA

Standby Current-Max :

0.003A

Organization :

8MX16

Write Cycle Time - Word, Page :

15ns

Height Seated (Max) :

1.2mm

Radiation Hardening :

No

I/O Type :

COMMON

Additional Feature :

AUTO/SELF REFRESH

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Clock Frequency :

200MHz

Terminal Finish :

Matte Tin (Sn) - annealed