IS43R16160B-5TLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Supply Voltage-Max (Vsup) :

2.7V

Memory Format :

DRAM

HTS Code :

8542.32.00.24

Number of Terminations :

66

Number of Functions :

1

Operating Temperature :

-40°C~85°C TA

Clock Frequency :

200MHz

Standby Current-Max :

0.03A

Peak Reflow Temperature (Cel) :

260

Nominal Supply Current :

290mA

Terminal Position :

Dual

Packaging :

Tray

Address Bus Width :

15b

Memory Type :

Volatile

Additional Feature :

AUTO/SELF REFRESH

Sequential Burst Length :

248

Organization :

16MX16

Qualification Status :

Not Qualified

Time@Peak Reflow Temperature-Max (s) :

10

Supply Voltage :

2.5V

Mounting Type :

Surface Mount

Access Time :

700ps

Write Cycle Time - Word, Page :

15ns

Operating Supply Voltage :

2.5V

Package / Case :

66-TSSOP (0.400, 10.16mm Width)

Height Seated (Max) :

1.2mm

Terminal Pitch :

0.65mm

Output Characteristics :

3-STATE

RoHS Status :

RoHS Compliant

Interleaved Burst Length :

248

Memory Width :

16

Data Bus Width :

16b

Voltage - Supply :

2.3V~2.7V

Density :

256 Mb

Number of Pins :

66

Memory Size :

256Mb 16M x 16

Number of Ports :

1

Mount :

Surface Mount

Memory Interface :

Parallel

Terminal Finish :

Matte Tin (Sn) - annealed

Pin Count :

66

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

I/O Type :

COMMON

JESD-609 Code :

e3

ECCN Code :

EAR99

Length :

22.22mm

Operating Mode :

SYNCHRONOUS

Refresh Cycles :

8192

Supply Voltage-Min (Vsup) :

2.3V