IS43LR32400F-6BLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Pin Count :

90

Output Characteristics :

3-STATE

I/O Type :

COMMON

Refresh Cycles :

4096

Package / Case :

90-TFBGA

Interleaved Burst Length :

24816

Voltage - Supply :

1.7V~1.95V

Organization :

4MX32

Radiation Hardening :

No

Nominal Supply Current :

95mA

Supply Voltage-Min (Vsup) :

1.7V

Time@Peak Reflow Temperature-Max (s) :

40

Memory Size :

128Mb 4M x 32

Supply Voltage-Max (Vsup) :

1.95V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Finish :

TIN SILVER COPPER

Density :

128 Mb

Access Time :

5.5ns

Address Bus Width :

14b

Operating Supply Voltage :

1.8V

Standby Current-Max :

0.00001A

RoHS Status :

RoHS Compliant

Mount :

Surface Mount

Height Seated (Max) :

1.2mm

Memory Width :

32

JESD-609 Code :

e1

Clock Frequency :

166MHz

Number of Terminations :

90

Additional Feature :

AUTO/SELF REFRESH

Supply Voltage :

1.8V

Memory Format :

DRAM

Terminal Position :

BOTTOM

Terminal Pitch :

0.8mm

Peak Reflow Temperature (Cel) :

260

Number of Pins :

90

Memory Interface :

Parallel

Mounting Type :

Surface Mount

Packaging :

Tray

Number of Ports :

1

Pbfree Code :

yes

Sequential Burst Length :

24816

Operating Temperature :

-40°C~85°C TA

Memory Type :

Volatile

Write Cycle Time - Word, Page :

15ns

Number of Functions :

1

Data Bus Width :

32b

Length :

13mm

HTS Code :

8542.32.00.02

ECCN Code :

EAR99