IS43LR32160B-6BLI
- Mfr.Part #
- IS43LR32160B-6BLI
- Manufacturer
- Integrated Silicon Solution, Inc. (ISSI)
- Package / Case
- 90-TFBGA
- Datasheet
- Download
- Description
- IC DRAM 512MBIT PARALLEL 90TFBGA
- Stock
- 5
- In Stock :
- 5
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- Manufacturer :
- Integrated Silicon Solution, Inc. (ISSI)
- Product Category :
- Memory
- Memory Width :
- 32
- Terminal Position :
- BOTTOM
- Clock Frequency :
- 166MHz
- Operating Temperature :
- -40°C~85°C TA
- Memory Interface :
- Parallel
- Pbfree Code :
- yes
- Operating Mode :
- SYNCHRONOUS
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mount :
- Surface Mount
- Density :
- 512 Mb
- Operating Supply Voltage :
- 1.8V
- Standby Current-Max :
- 0.00001A
- Terminal Finish :
- TIN SILVER COPPER
- Qualification Status :
- Not Qualified
- Mounting Type :
- Surface Mount
- Address Bus Width :
- 15b
- Length :
- 13mm
- Additional Feature :
- AUTO/SELF REFRESH
- Nominal Supply Current :
- 110mA
- Terminal Pitch :
- 0.8mm
- Data Bus Width :
- 32b
- Access Time :
- 5.5ns
- Moisture Sensitivity Level (MSL) :
- 3 (168 Hours)
- Height Seated (Max) :
- 1.2mm
- Organization :
- 16MX32
- I/O Type :
- COMMON
- ECCN Code :
- EAR99
- JESD-609 Code :
- e1
- Number of Terminations :
- 90
- Refresh Cycles :
- 8192
- HTS Code :
- 8542.32.00.28
- Packaging :
- Tray
- Number of Pins :
- 90
- Memory Size :
- 512Mb 16M x 32
- Interleaved Burst Length :
- 24816
- Factory Lead Time :
- 14 Weeks
- Write Cycle Time - Word, Page :
- 12ns
- Number of Ports :
- 1
- RoHS Status :
- ROHS3 Compliant
- Voltage - Supply :
- 1.7V~1.95V
- Sequential Burst Length :
- 24816
- Pin Count :
- 90
- Peak Reflow Temperature (Cel) :
- 260
- Memory Type :
- Volatile
- Supply Voltage :
- 1.8V
- Supply Voltage-Min (Vsup) :
- 1.7V
- Package / Case :
- 90-TFBGA
- Memory Format :
- DRAM
- Supply Voltage-Max (Vsup) :
- 1.95V
- Number of Functions :
- 1
- Output Characteristics :
- 3-STATE
- Datasheets
- IS43LR32160B-6BLI
Memory Integrated Silicon Solution, Inc. (ISSI) IS43LR32160B-6BLI Overview
The Memory Integrated Silicon Solution, Inc. (ISSI) IS43LR32160B-6BLI is a high-performance 512Mbit DRAM chip, meticulously designed to meet the demands of sophisticated electronic applications. Crafted using a 90TFBGA package, this DRAM offers robust data storage capabilities and high-speed data processing, ensuring reliable and efficient performance. Its compact form factor and advanced memory capacity make it ideal for applications requiring high-volume data management and speed, tailored specifically for B2B customers looking for scalable memory solutions in compact devices.
IS43LR32160B-6BLI Features
This DRAM chip features a parallel interface, providing high-speed data transfer rates that are crucial for applications requiring quick access to large amounts of data. The compact 90TFBGA package ensures that it can fit into tight spaces, making it perfect for densely packed electronic assemblies. With a substantial 512Mbit capacity, it offers ample storage for both temporary and long-term data needs.
IS43LR32160B-6BLI Applications
- Advanced Computing Systems: Utilizes its high-speed parallel interface and large memory capacity to manage complex computations and processes efficiently.
- Consumer Electronics: Employs in devices such as high-performance gaming consoles and smart TVs, providing the necessary speed and storage to enhance user experiences.
- Telecommunication Infrastructure: Supports the demands of telecommunications equipment, facilitating rapid data processing and storage necessary for network management and operations.
- Automotive Electronics: Integrated into advanced driver-assistance systems (ADAS) and infotainment systems, offering reliability and performance in critical applications.
- Industrial Automation: Applied in control systems requiring fast data access and real-time processing capabilities to optimize manufacturing processes.
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