IS43LR32160B-6BL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Peak Reflow Temperature (Cel) :

260

Operating Supply Voltage :

1.8V

Supply Voltage-Min (Vsup) :

1.7V

JESD-609 Code :

e1

Refresh Cycles :

8192

Memory Type :

Volatile

Operating Mode :

SYNCHRONOUS

Factory Lead Time :

14 Weeks

Access Time :

5.5ns

Terminal Finish :

TIN SILVER COPPER

Memory Size :

512Mb 16M x 32

Height Seated (Max) :

1.2mm

Density :

512 Mb

Write Cycle Time - Word, Page :

12ns

Number of Pins :

90

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Number of Functions :

1

Number of Ports :

1

Mounting Type :

Surface Mount

I/O Type :

COMMON

Memory Interface :

Parallel

Interleaved Burst Length :

24816

Organization :

16MX32

Memory Width :

32

Length :

13mm

Number of Terminations :

90

RoHS Status :

ROHS3 Compliant

Package / Case :

90-TFBGA

Nominal Supply Current :

110mA

Qualification Status :

Not Qualified

Packaging :

Tray

Sequential Burst Length :

24816

Supply Voltage-Max (Vsup) :

1.95V

Pin Count :

90

Supply Voltage :

1.8V

Terminal Position :

BOTTOM

Address Bus Width :

15b

Operating Temperature :

-40°C~85°C TA

ECCN Code :

EAR99

Memory Format :

DRAM

Standby Current-Max :

0.00001A

Additional Feature :

AUTO/SELF REFRESH

Output Characteristics :

3-STATE

Pbfree Code :

yes

Terminal Pitch :

0.8mm

Time@Peak Reflow Temperature-Max (s) :

40

Voltage - Supply :

1.7V~1.95V

HTS Code :

8542.32.00.28

Data Bus Width :

32b

Clock Frequency :

166MHz

Mount :

Surface Mount