IS43LR16800F-6BL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Radiation Hardening :

No

Output Characteristics :

3-STATE

Memory Format :

DRAM

Standby Current-Max :

0.00001A

Clock Frequency :

166MHz

Supply Voltage :

1.8V

Mount :

Surface Mount

Package / Case :

60-TFBGA

Operating Temperature :

0°C~70°C TA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Interface :

Parallel

Memory Type :

Volatile

Pbfree Code :

yes

Number of Ports :

1

Terminal Pitch :

0.8mm

HTS Code :

8542.32.00.02

Number of Pins :

60

Supply Voltage-Max (Vsup) :

1.95V

Time@Peak Reflow Temperature-Max (s) :

40

Memory Size :

128Mb 8M x 16

Density :

128 Mb

Peak Reflow Temperature (Cel) :

260

Supply Voltage-Min (Vsup) :

1.7V

Mounting Type :

Surface Mount

Memory Width :

16

Nominal Supply Current :

85mA

Number of Functions :

1

Data Bus Width :

16b

Terminal Finish :

TIN SILVER COPPER

JESD-609 Code :

e1

Height Seated (Max) :

1.1mm

Length :

10mm

I/O Type :

COMMON

Terminal Position :

BOTTOM

Access Time :

5.5ns

Number of Terminations :

60

Voltage - Supply :

1.7V~1.95V

Write Cycle Time - Word, Page :

15ns

Additional Feature :

AUTO/SELF REFRESH

Address Bus Width :

14b

RoHS Status :

RoHS Compliant

Pin Count :

60

Organization :

8MX16

Interleaved Burst Length :

24816

Packaging :

Tray

Refresh Cycles :

4096

ECCN Code :

EAR99

Operating Supply Voltage :

1.8V

Sequential Burst Length :

24816