IS43DR86400D-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Write Cycle Time - Word, Page :

15ns

HTS Code :

8542.32.00.28

Length :

10.5mm

JESD-609 Code :

e1

Number of Pins :

60

Standby Current-Max :

0.025A

Memory Type :

Volatile

Supply Current-Max :

0.23mA

I/O Type :

COMMON

Interleaved Burst Length :

48

Memory Interface :

Parallel

Access Time :

450ps

Number of Terminations :

60

Package / Case :

60-TFBGA

RoHS Status :

ROHS3 Compliant

Terminal Position :

BOTTOM

Supply Voltage :

1.8V

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Memory Size :

512Mb 64M x 8

Mounting Type :

Surface Mount

Sequential Burst Length :

48

Factory Lead Time :

8 Weeks

Voltage - Supply :

1.7V~1.9V

Operating Mode :

SYNCHRONOUS

Address Bus Width :

14b

Clock Frequency :

333MHz

Supply Voltage-Max (Vsup) :

1.9V

Height Seated (Max) :

1.2mm

Memory Width :

8

Refresh Cycles :

8192

Number of Ports :

1

Surface Mount :

yes

Terminal Finish :

TIN SILVER COPPER

Operating Temperature :

-40°C~85°C TA

Organization :

64MX8

Qualification Status :

Not Qualified

ECCN Code :

EAR99

Supply Voltage-Min (Vsup) :

1.7V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tray

Number of Functions :

1

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Supply Voltage :

1.8V

Density :

512 Mb

Additional Feature :

PROGRAMMABLE CAS LATENCY

Output Characteristics :

3-STATE

Memory Format :

DRAM

Terminal Pitch :

0.8mm