IS43DR86400C-3DBLI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Nominal Supply Current :

250mA

Package / Case :

60-TFBGA

Memory Type :

Volatile

Length :

10.5mm

Address Bus Width :

16b

Max Supply Current :

120mA

Operating Supply Voltage :

1.8V

Memory Interface :

Parallel

Number of Ports :

1

Radiation Hardening :

No

Interleaved Burst Length :

48

Memory Size :

512Mb 64M x 8

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Number of Terminations :

60

Terminal Pitch :

0.8mm

I/O Type :

COMMON

Organization :

64MX8

Access Time :

450ps

Number of Functions :

1

Supply Voltage-Max (Vsup) :

1.9V

Supply Voltage :

1.8V

Output Characteristics :

3-STATE

Supply Voltage-Min (Vsup) :

1.7V

Packaging :

Tray

Number of Pins :

60

Operating Temperature :

-40°C~85°C TA

Clock Frequency :

333MHz

Memory Width :

8

Standby Current-Max :

0.011A

RoHS Status :

ROHS3 Compliant

Voltage - Supply :

1.7V~1.9V

Density :

512 Mb

Height Seated (Max) :

1.2mm

Write Cycle Time - Word, Page :

15ns

Memory Format :

DRAM

Sequential Burst Length :

48

Data Bus Width :

8B

Factory Lead Time :

8 Weeks

Refresh Cycles :

8192

Additional Feature :

AUTO/SELF REFRESH

Mounting Type :

Surface Mount

JESD-609 Code :

e1

Mount :

Surface Mount