IS43DR86400C-3DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Number of Terminations :

60

Memory Format :

DRAM

Memory Width :

8

Organization :

64MX8

Supply Voltage-Min (Vsup) :

1.7V

Packaging :

Tray

Output Characteristics :

3-STATE

Operating Mode :

SYNCHRONOUS

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Clock Frequency :

333MHz

Memory Type :

Volatile

Length :

10.5mm

Qualification Status :

Not Qualified

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Operating Temperature :

0°C~70°C TA

Terminal Position :

BOTTOM

Factory Lead Time :

8 Weeks

Max Supply Current :

120mA

Supply Voltage :

1.8V

Number of Ports :

1

Data Bus Width :

8B

Memory Interface :

Parallel

Refresh Cycles :

8192

Number of Functions :

1

JESD-609 Code :

e1

Write Cycle Time - Word, Page :

15ns

Voltage - Supply :

1.7V~1.9V

RoHS Status :

ROHS3 Compliant

I/O Type :

COMMON

Memory Size :

512Mb 64M x 8

Supply Voltage-Max (Vsup) :

1.9V

Surface Mount :

yes

Interleaved Burst Length :

48

Sequential Burst Length :

48

Power Supplies :

1.8V

Height Seated (Max) :

1.2mm

Number of Pins :

60

Additional Feature :

AUTO/SELF REFRESH

Mounting Type :

Surface Mount

Access Time :

450ps

Terminal Pitch :

0.8mm

Package / Case :

60-TFBGA

Memory Density :

536870912 bit

Standby Current-Max :

0.011A