IS43DR86400C-25DBL

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Memory Width :

8

Data Bus Width :

8B

Power Supplies :

1.8V

Organization :

64MX8

Memory Size :

512Mb 64M x 8

Supply Voltage-Max (Vsup) :

1.9V

Max Supply Current :

135mA

Number of Ports :

1

Operating Mode :

SYNCHRONOUS

Number of Functions :

1

Memory Format :

DRAM

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Terminal Pitch :

0.8mm

Refresh Cycles :

8192

Supply Voltage-Min (Vsup) :

1.7V

Standby Current-Max :

0.013A

Length :

10.5mm

Height Seated (Max) :

1.2mm

Number of Terminations :

60

Write Cycle Time - Word, Page :

15ns

Clock Frequency :

400MHz

Terminal Position :

BOTTOM

Memory Density :

536870912 bit

Number of Pins :

60

Additional Feature :

AUTO/SELF REFRESH

ECCN Code :

EAR99

Output Characteristics :

3-STATE

Factory Lead Time :

8 Weeks

Qualification Status :

Not Qualified

Surface Mount :

yes

Supply Voltage :

1.8V

Package / Case :

60-TFBGA

Interleaved Burst Length :

48

Memory Type :

Volatile

Operating Temperature :

0°C~70°C TA

Mounting Type :

Surface Mount

Sequential Burst Length :

48

RoHS Status :

ROHS3 Compliant

Memory Interface :

Parallel

Packaging :

Tray

Voltage - Supply :

1.7V~1.9V

I/O Type :

COMMON

Access Time :

400ps