IS43DR86400C-25DBI

Manufacturer :

Integrated Silicon Solution, Inc. (ISSI)

Product Category :

Memory

Terminal Position :

BOTTOM

Output Characteristics :

3-STATE

Number of Ports :

1

Operating Temperature :

-40°C~85°C TA

Moisture Sensitivity Level (MSL) :

3 (168 Hours)

Height Seated (Max) :

1.2mm

Memory Density :

536870912 bit

Surface Mount :

yes

Sequential Burst Length :

48

Qualification Status :

Not Qualified

Voltage - Supply :

1.7V~1.9V

Supply Current-Max :

0.37mA

Supply Voltage :

1.8V

Interleaved Burst Length :

48

Memory Type :

Volatile

Supply Voltage-Min (Vsup) :

1.7V

Clock Frequency :

400MHz

Package / Case :

60-TFBGA

Organization :

64MX8

JESD-30 Code :

R-PBGA-B60

Mounting Type :

Surface Mount

Number of Terminations :

60

Access Time :

400ps

Memory Size :

512M 64M x 8

Memory Format :

DRAM

Number of Functions :

1

Operating Mode :

SYNCHRONOUS

Power Supplies :

1.8V

Reach Compliance Code :

Compliant

Memory Width :

8

Memory Interface :

Parallel

Packaging :

Tray

Length :

10.5mm

Standby Current-Max :

0.013A

I/O Type :

COMMON

Refresh Cycles :

8192

Write Cycle Time - Word, Page :

15ns

Width :

8mm

RoHS Status :

Non-RoHS Compliant

Supply Voltage-Max (Vsup) :

1.9V

Terminal Pitch :

0.8mm

Additional Feature :

AUTO/SELF REFRESH